Multi-terminal memtransistors from polycrystalline monolayer MoS2

Vinod K. Sangwan, Hong Sub Lee, Hadallia Bergeron, Itamar Balla, Megan E. Beck, Kan Sheng Chen, Mark C. Hersam*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing.1, 2, 3, 4, 5, 6 Compared to flash memory, memristors have higher endurance, multi-bit data storage, and faster read/write times.4, 7, 8 However, although 2-terminal memristors have demonstrated basic neural functions, synapses in the human brain outnumber neurons by more than a factor of 1000, which implies that multi-terminal memristors are needed to perform complex functions such as heterosynaptic plasticity.3, 9, 10, 11, 12, 13 Previous attempts to move beyond 2-terminal memristors include the 3-terminal Widrow-Hoff memistor14 and field-effect transistors with nanoionic gates15 or floating gates,16 albeit without memristive switching in the transistor.17 Here, we report the scalable experimental realization of a multi-terminal hybrid memristor and transistor (i.e., memtransistor) using polycrystalline monolayer MoS2. Two-dimensional (2D) MoS2 memtransistors show gate tunability in individual states by 4 orders of magnitude in addition to large switching ratios with high cycling endurance and long-term retention of states. In addition to conventional neural learning behavior of long-term potentiation/depression, 6-terminal MoS2 memtransistors possess gate-tunable heterosynaptic functionality that is not achievable using 2-terminal memristors. For example, the conductance between a pair of two floating electrodes (pre-synaptic and post-synaptic neurons) is varied by ~10× by applying voltage pulses to modulatory terminals. In situ scanning probe microscopy, cryogenic charge transport measurements, and device modeling reveal that bias-induced MoS2 defect motion drives resistive switching by dynamically varying Schottky barrier heights. Overall, the seamless integration of a memristor and transistor into one multi-terminal device has the potential to enable complex Hebbian learning in addition to providing opportunities for studying the unique physics of defect kinetics in 2D materials.18, 19, 20, 21, 22

Original languageEnglish (US)
JournalUnknown Journal
StatePublished - Feb 21 2018

ASJC Scopus subject areas

  • General

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