TY - JOUR
T1 - Multi-Terminal Superconducting Nonequilibrium Device With a Ferromagnetic Screen
AU - Nevirkovets, I. P.
AU - Chernyashevskyy, O.
AU - Ketterson, J. B.
AU - Pan, A. V.
N1 - Funding Information:
Manuscript received August 02, 2010; accepted September 29, 2010. Date of publication November 09, 2010; date of current version May 27, 2011. This work made use of facilities operated by the Northwestern Materials Research Center supported by the NSF and was financially supported in part by Australian Research Council via A. V. Pan’s Discovery Project.
PY - 2011/6
Y1 - 2011/6
N2 - Abstract-We have fabricated and characterized double-barrier multi-terminal superconducting transistor-like devices with the NB/Al/AlOx/Al/Nb/ Ni/Al/Alox/Al/Nb(S1IS2FIS3) structure, where S, I, and F refer to superconducting, insulating, and ferromagnetic layers, respectively. A thin ferromagnetic Ni layer screens the superconductivity of the middle Nb layer on the injector-barrier side, so that the Nb/Ni bilayer manifests itself as a superconductor in the current-voltage characteristic ( I-V curve) of the acceptor S1IS2 junction, but as a normal metal in the I-V curve of the injector S2FIS3 junction. It is shown that this property allows for considerable improvement of the input-output isolation of the quasiparticle-injection devices as compared with that for the formerly reported quiteron.
AB - Abstract-We have fabricated and characterized double-barrier multi-terminal superconducting transistor-like devices with the NB/Al/AlOx/Al/Nb/ Ni/Al/Alox/Al/Nb(S1IS2FIS3) structure, where S, I, and F refer to superconducting, insulating, and ferromagnetic layers, respectively. A thin ferromagnetic Ni layer screens the superconductivity of the middle Nb layer on the injector-barrier side, so that the Nb/Ni bilayer manifests itself as a superconductor in the current-voltage characteristic ( I-V curve) of the acceptor S1IS2 junction, but as a normal metal in the I-V curve of the injector S2FIS3 junction. It is shown that this property allows for considerable improvement of the input-output isolation of the quasiparticle-injection devices as compared with that for the formerly reported quiteron.
KW - Ferromagnet-superconductor structures
KW - Nonequilibrium superconductivity
KW - Proximity effect
KW - Superconducting transistors
KW - Superconductor-insulator- superconductor devices
KW - Tunneling
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U2 - 10.1109/TASC.2010.2084551
DO - 10.1109/TASC.2010.2084551
M3 - Article
AN - SCOPUS:79957942170
SN - 1051-8223
VL - 21
SP - 721
EP - 723
JO - IEEE Transactions on Applied Superconductivity
JF - IEEE Transactions on Applied Superconductivity
IS - 3 PART 1
M1 - 5624603
ER -