Multi-Terminal Superconducting Nonequilibrium Device With a Ferromagnetic Screen

I. P. Nevirkovets, O. Chernyashevskyy, J. B. Ketterson, A. V. Pan

Research output: Contribution to journalArticle

Abstract

Abstract-We have fabricated and characterized double-barrier multi-terminal superconducting transistor-like devices with the NB/Al/AlOx/Al/Nb/ Ni/Al/Alox/Al/Nb(S1IS2FIS3) structure, where S, I, and F refer to superconducting, insulating, and ferromagnetic layers, respectively. A thin ferromagnetic Ni layer screens the superconductivity of the middle Nb layer on the injector-barrier side, so that the Nb/Ni bilayer manifests itself as a superconductor in the current-voltage characteristic ( I-V curve) of the acceptor S1IS2 junction, but as a normal metal in the I-V curve of the injector S2FIS3 junction. It is shown that this property allows for considerable improvement of the input-output isolation of the quasiparticle-injection devices as compared with that for the formerly reported quiteron.

Original languageEnglish (US)
Article number5624603
Pages (from-to)721-723
Number of pages3
JournalIEEE Transactions on Applied Superconductivity
Volume21
Issue number3 PART 1
DOIs
StatePublished - Jun 1 2011

Keywords

  • Ferromagnet-superconductor structures
  • Nonequilibrium superconductivity
  • Proximity effect
  • Superconducting transistors
  • Superconductor-insulator- superconductor devices
  • Tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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