Multidielectrics for GaAs MIS devices using composition-graded Al xGa1-xAs and oxidized AlAs

W. T. Tsang*, M. Olmstead, R. P H Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Metal-insulator-semiconductor (MIS) structures were prepared by dry thermal oxidation of an AlAs layer that had been grown on a composition-graded Al xGa1-xAs layer on GaAs. The epitaxial layers were grown by molecular beam epitaxy. Capacitance-voltage (C-V) measurements of these MIS structures demonstrated the achievement of inversion behavior with essentially no hysteresis and flatband voltages ranging from 0 to 0.1 V, which correspond to a fixed interface charge density of less than 2×1010 cm -2. It was also found that the stress developed between the oxide film and the epilayer was reduced in these MIS structures.

Original languageEnglish (US)
Pages (from-to)408-410
Number of pages3
JournalApplied Physics Letters
Volume34
Issue number6
DOIs
StatePublished - Dec 1 1979

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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