Multiple bonding configurations for Te adsorbed on the Ge(001) surface

P. F. Lyman, D. L. Marasco, D. A. Walko, M. J. Bedzyk*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Using high-resolution x-ray standing waves and low-energy electron diffraction, the structure of Te adsorbed on Ge(001) was studied. A coverage-dependent structural rearrangement was observed between Te coverages of 1 and 0.5 monolayer (ML). At Te coverages near 1 ML, Te was found to adsorb in a bridge site, as expected. However, at Te coverages near 0.5 ML, a structure unanticipated for Group VI/Group IV adsorption was discovered. Te-Ge heterodimers were formed with an average valency of 5, allowing them to satisfy all surface dangling bonds. The results help explain the efficacy of Te as a surfactant in epitaxial growth of Ge/Si(001).

Original languageEnglish (US)
Pages (from-to)8704-8712
Number of pages9
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number12
DOIs
StatePublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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