TY - JOUR
T1 - Multiple Converged Conduction Bands in K2Bi8Se13
T2 - A Promising Thermoelectric Material with Extremely Low Thermal Conductivity
AU - Pei, Yanling
AU - Chang, Cheng
AU - Wang, Zhe
AU - Yin, Meijie
AU - Wu, Minghui
AU - Tan, Gangjian
AU - Wu, Haijun
AU - Chen, Yuexing
AU - Zheng, Lei
AU - Gong, Shengkai
AU - Zhu, Tiejun
AU - Zhao, Xinbing
AU - Huang, Li
AU - He, Jiaqing
AU - Kanatzidis, Mercouri G.
AU - Zhao, Li Dong
N1 - Funding Information:
This work was supported by the Department of Energy, Office of Science Basic Energy Sciences, under grant DE-SC0014520 (M.G.K.). This work was also supported by the Zhuoyue program of Beihang University, the Recruitment Program for Young Professionals, NSFC under Grant No. 51571007, and the Fundamental Research Funds for the Central Universities (L.-D.Z., Y.P., C.C.) and 11404160 (L.H.). This work was also supported by the startup of South University of Science, Technology of China, the Recruitment Program for Young Professionals, the Science, Technology and Innovation Commission o f Shenzhen Municipality (JCYJ 20140612140151884, KQCX2015033110182370, and JCYJ20150831142508365) (J.H.).
Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/12/21
Y1 - 2016/12/21
N2 - We report that K2Bi8Se13 exhibits multiple conduction bands that lie close in energy and can be activated through doping, leading to a highly enhanced Seebeck coefficient and a high power factor with elevated temperature. Meanwhile, the large unit cell, complex low symmetry crystal structure, and nondirectional bonding lead to the very low lattice thermal conductivity of K2Bi8Se13, ranging between 0.42 and 0.20 W m-1 K-1 in the temperature interval 300-873 K. Experimentally, we further support the low thermal conductivity of K2Bi8Se13 using phonon velocity measurements; the results show a low average phonon velocity (1605 ms-1), small Young's modulus (37.1 GPa), large Grüneisen parameter (1.71), and low Debye temperature (154 K). A detailed investigation of the microstructure and defects was carried out using electron diffraction and transmission microscopy which reveal the presence of a K2.5Bi8.5Se14 minor phase intergrown along the side of the K2Bi8Se13 phase. The combination of enhanced power factor and low thermal conductivity results in a high ZT value of ∼1.3 at 873 K in electron doped K2Bi8Se13 material.
AB - We report that K2Bi8Se13 exhibits multiple conduction bands that lie close in energy and can be activated through doping, leading to a highly enhanced Seebeck coefficient and a high power factor with elevated temperature. Meanwhile, the large unit cell, complex low symmetry crystal structure, and nondirectional bonding lead to the very low lattice thermal conductivity of K2Bi8Se13, ranging between 0.42 and 0.20 W m-1 K-1 in the temperature interval 300-873 K. Experimentally, we further support the low thermal conductivity of K2Bi8Se13 using phonon velocity measurements; the results show a low average phonon velocity (1605 ms-1), small Young's modulus (37.1 GPa), large Grüneisen parameter (1.71), and low Debye temperature (154 K). A detailed investigation of the microstructure and defects was carried out using electron diffraction and transmission microscopy which reveal the presence of a K2.5Bi8.5Se14 minor phase intergrown along the side of the K2Bi8Se13 phase. The combination of enhanced power factor and low thermal conductivity results in a high ZT value of ∼1.3 at 873 K in electron doped K2Bi8Se13 material.
UR - http://www.scopus.com/inward/record.url?scp=85006860776&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006860776&partnerID=8YFLogxK
U2 - 10.1021/jacs.6b09568
DO - 10.1021/jacs.6b09568
M3 - Article
C2 - 27936656
AN - SCOPUS:85006860776
SN - 0002-7863
VL - 138
SP - 16364
EP - 16371
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 50
ER -