Multiterminal Superconducting-Ferromagnetic Device with Magnetically Tunable Supercurrent for Memory Application

Ivan P. Nevirkovets*, Serhii E. Shafraniuk, Oleg A. Mukhanov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We report on the fabrication and testing at 4.2 K of four-terminal SF1IF2S1IS2 devices, where S denotes a superconductor (Nb), F1,2 denotes ferromagnetic material (permalloy (Py) and Ni, respectively), and I denotes an insulator (AlOx). The F1 IF2 structure plays a role of a pseudospin valve, in which the magnetization vector of the Py layer can be reversed either by an externally applied magnetic field, or, potentially, by the electric current. The two different magnetization orientations in the F1 and F2 layers can be sensed by an adjacent S1 IS2 junction, resulting in the two distinct Josephson critical current values. Such controlled manipulation of the Josephson critical current offers a possibility of building a cryogenic memory cell based on the four-terminal hybrid S/F device. One of the advantages of this memory device is its compatibility with the single flux quantum circuit elements. We present a theoretical model that adequately describes the experimental results.

Original languageEnglish (US)
Article number8359348
JournalIEEE Transactions on Applied Superconductivity
Volume28
Issue number7
DOIs
StatePublished - Oct 2018
Externally publishedYes

Keywords

  • Cryogenic memory
  • Josephson effect
  • pseudospin valve (PSV)
  • superconducting-ferromagnetic devices
  • superconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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