The GaAs-Ga0.49In0.51P heterostructure has become very important for optoelectronic and electronic device applications: precise control of the doping level in the material is necessary. We have studied the n-type and p-type doping behaviour of GaAs-GaInP layers grown by LP-MOCVD. We used sulfur and silicon for n type and zinc for p-type doping.
|Translated title of the contribution||n- and p-type doping studies of GaAs and GaInP|
|Number of pages||30|
|Journal||Revue technique - Thomson-CSF|
|State||Published - Sep 1 1991|
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