Etude du dopage de type n et p des materiaux GaAs et GaInP

Translated title of the contribution: n- and p-type doping studies of GaAs and GaInP

F. Omnes*, M. Defour, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The GaAs-Ga0.49In0.51P heterostructure has become very important for optoelectronic and electronic device applications: precise control of the doping level in the material is necessary. We have studied the n-type and p-type doping behaviour of GaAs-GaInP layers grown by LP-MOCVD. We used sulfur and silicon for n type and zinc for p-type doping.

Translated title of the contributionn- and p-type doping studies of GaAs and GaInP
Original languageFrench
Pages (from-to)529-558
Number of pages30
JournalRevue technique - Thomson-CSF
Volume23
Issue number3
StatePublished - Sep 1 1991

ASJC Scopus subject areas

  • Engineering(all)

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