N-type colloidal-quantum-dot solids for photovoltaics

David Zhitomirsky; Melissa Furukawa; Jiang Tang; Philipp Stadler; Sjoerd Hoogland; Oleksandr Voznyy; Huan Liu; Edward H. Sargent

doi:10.1002/adma.201202825

N-type colloidal-quantum-dot solids for photovoltaics

David Zhitomirsky, Melissa Furukawa, Jiang Tang, Philipp Stadler, Sjoerd Hoogland, Oleksandr Voznyy, Huan Liu, Edward H. Sargent^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

178 Scopus citations

Abstract

N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm² V ^-1 s^-1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 10¹⁶ to 10¹⁸ cm^-3 is varied systematically.

Original language	English (US)
Pages (from-to)	6181-6185
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	46
DOIs	https://doi.org/10.1002/adma.201202825
State	Published - Dec 4 2012

Keywords

colloidal quantum dots
doping
n-type materials
PbS
photovoltaics

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201202825

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abstract = "N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V -1 s-1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm-3 is varied systematically.",

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T1 - N-type colloidal-quantum-dot solids for photovoltaics

AU - Zhitomirsky, David

AU - Furukawa, Melissa

AU - Tang, Jiang

AU - Stadler, Philipp

AU - Hoogland, Sjoerd

AU - Voznyy, Oleksandr

AU - Liu, Huan

AU - Sargent, Edward H.

PY - 2012/12/4

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N2 - N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V -1 s-1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm-3 is varied systematically.

AB - N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V -1 s-1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm-3 is varied systematically.

KW - colloidal quantum dots

KW - doping

KW - n-type materials

KW - PbS

KW - photovoltaics

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ER -

N-type colloidal-quantum-dot solids for photovoltaics

Abstract

Keywords

ASJC Scopus subject areas

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