N-type colloidal-quantum-dot solids for photovoltaics

David Zhitomirsky, Melissa Furukawa, Jiang Tang, Philipp Stadler, Sjoerd Hoogland, Oleksandr Voznyy, Huan Liu, Edward H. Sargent*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

184 Scopus citations

Abstract

N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V -1 s-1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm-3 is varied systematically.

Original languageEnglish (US)
Pages (from-to)6181-6185
Number of pages5
JournalAdvanced Materials
Volume24
Issue number46
DOIs
StatePublished - Dec 4 2012

Keywords

  • PbS
  • colloidal quantum dots
  • doping
  • n-type materials
  • photovoltaics

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science

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