N-type field-effect transistors using multiple Mg-doped ZnO nanorods

Sanghyun Ju*, Jianye Li, Ninad Pimparkar, Muhammad A. Alam, R. P.H. Chang, David B. Janes

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO2 gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ∼ 1 μA per nanorod and little change in off-current (∼ 4 × 10 -12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold.

Original languageEnglish (US)
Pages (from-to)390-394
Number of pages5
JournalIEEE Transactions on Nanotechnology
Issue number3
StatePublished - May 2007


  • Multiple
  • Nanorod
  • Transistor
  • ZnO

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering


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