TY - JOUR
T1 - Na Doping in PbTe
T2 - Solubility, Band Convergence, Phase Boundary Mapping, and Thermoelectric Properties
AU - Jood, Priyanka
AU - Male, James P.
AU - Anand, Shashwat
AU - Matsushita, Yoshitaka
AU - Takagiwa, Yoshiki
AU - Kanatzidis, Mercouri G.
AU - Snyder, G. Jeffrey
AU - Ohta, Michihiro
N1 - Funding Information:
The authors express thanks to Mr. Ichiro Okumura (of AIST) for his assistance in preparing the PbTe-based ingots and sintered compacts. At AIST this work was supported by Development of Thermal Management Materials and Technology funded by the New Energy and Industrial Technology Development Organization (NEDO). At Northwestern University this work was performed under financial assistance Award No. 70NANB19H005 from the U.S. Department of Commerce, National Institute of Standards and Technology as part of the Center for Hierarchical Materials Design (CHiMaD). M.G.K. thanks the Department of Energy, Office of Science Basic Energy Sciences for Grant No. DE-SC0014520, DOE Office of Science (materials synthesis and characterization). Y.M. and Y.T. acknowledge the support from Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area) 19H05817 and 19H05819.
PY - 2020/9/9
Y1 - 2020/9/9
N2 - Many monumental breakthroughs in p-type PbTe thermoelectrics are driven by optimizing a Pb0.98Na0.02Te matrix. However, recent works found that x > 0.02 in Pb1-xNaxTe further improves the thermoelectric figure of merit, zT, despite being above the expected Na solubility limit. We explain the origins of improved performance from excess Na doping through computation and experiments on Pb1-xNaxTe with 0.01 ≤ x ≤ 0.04. High temperature X-ray diffraction and Hall carrier concentration measurements show enhanced Na solubility at high temperatures when x > 0.02 but no improvement in carrier concentration, indicating that Na is entering the lattice but is electrically compensated by high intrinsic defect concentrations. The higher Na concentration leads to band convergence between the light L and heavy ς valence bands in PbTe, suppressing bipolar conduction and increasing the Seebeck coefficient. This results in a high temperature zT nearing 2 for Pb0.96Na0.04Te, ∼25% higher than traditionally reported values for pristine PbTe-Na. Further, we apply a phase diagram approach to explain the origins of increased solubility from excess Na doping and offer strategies for repeatable synthesis of high zT Na-doped materials. A starting matrix of simple, high performing Pb0.96Na0.04Te synthesized following our guidelines may be superior to Pb0.98Na0.02Te for continued zT optimization in p-type PbTe materials.
AB - Many monumental breakthroughs in p-type PbTe thermoelectrics are driven by optimizing a Pb0.98Na0.02Te matrix. However, recent works found that x > 0.02 in Pb1-xNaxTe further improves the thermoelectric figure of merit, zT, despite being above the expected Na solubility limit. We explain the origins of improved performance from excess Na doping through computation and experiments on Pb1-xNaxTe with 0.01 ≤ x ≤ 0.04. High temperature X-ray diffraction and Hall carrier concentration measurements show enhanced Na solubility at high temperatures when x > 0.02 but no improvement in carrier concentration, indicating that Na is entering the lattice but is electrically compensated by high intrinsic defect concentrations. The higher Na concentration leads to band convergence between the light L and heavy ς valence bands in PbTe, suppressing bipolar conduction and increasing the Seebeck coefficient. This results in a high temperature zT nearing 2 for Pb0.96Na0.04Te, ∼25% higher than traditionally reported values for pristine PbTe-Na. Further, we apply a phase diagram approach to explain the origins of increased solubility from excess Na doping and offer strategies for repeatable synthesis of high zT Na-doped materials. A starting matrix of simple, high performing Pb0.96Na0.04Te synthesized following our guidelines may be superior to Pb0.98Na0.02Te for continued zT optimization in p-type PbTe materials.
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U2 - 10.1021/jacs.0c07067
DO - 10.1021/jacs.0c07067
M3 - Article
C2 - 32786772
AN - SCOPUS:85090614196
VL - 142
SP - 15464
EP - 15475
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 36
ER -