Nano-probe x-ray analysis and high-resolution imaging of planar defects in high-pressure synthesized infinite-layer superconductor

Y. Y. Wang*, H. Zhang, V. P. Dravid, H. Zhang, L. D. Marks, P. Han, D. A. Payne

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

The planar defects in a high pressure synthesized infinite-layer superconductor were investigated as a function of the material's superconducting properties. Nanometer probe x-ray microanalysis, high resolution electron microscopy and image simulation were used to determine the chemical composition and atomic structure of the defects. An atomic structure model was also constructed. The measured and computed results are presented.

Original languageEnglish (US)
Pages728-729
Number of pages2
StatePublished - 1994
EventProceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA
Duration: Jul 31 1994Aug 5 1994

Other

OtherProceedings of the 52nd Annual Meeting of the Microscopy Society of America
CityNew Orleans, LA, USA
Period7/31/948/5/94

ASJC Scopus subject areas

  • Engineering(all)

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