Abstract
We report a novel type of nanocomposite of conjugated polymer (regio-regular polythiophene) with infrared-sensitive, PbSe quantum dots (QD), which have size-tunable lowest-energy absorption bands between 0.3 and 1 eV. Thin film devices show very good diode characteristics and sizable photovoltaic response with an open circuit voltage, Voc, of ∼ 0.3-0.4 V and short circuit current density, J sc, of ∼ 0.2mA/cm 2, which is significantly higher than recently reported in PbS QD-based devices. This is the evidence of a quite efficient photoinduced charge transfer between the polymer and QD, with infrared sensitivity. Photocurrent under reverse bias is significantly enhanced to J ph ∼ 1 mA/cm 2 indicating that the polythiophene/PbSe QD system can be used as effective infrared photodetectors. Detailed spectroscopic studies of photoresponse over a wide spectral range are presented. Quenching of photoluminescence by PbSe QDs has also been studied to gain more understanding of energy and charge transfer in this system.
Original language | English (US) |
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Article number | 59381F |
Pages (from-to) | 1-9 |
Number of pages | 9 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5938 |
DOIs | |
State | Published - 2005 |
Event | Organic Photovoltaics VI - San Diego, CA, United States Duration: Aug 2 2005 → Aug 4 2005 |
Keywords
- Conjugated polymer
- Plastic solar cell
- Polythiophene
- Quantum dot
- Semiconductor nanocrystals
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering