Nanolithography using spin-coatable ZrO2 resist and its application to sub-10 nm direct pattern transfer on compound semiconductors

Boyang Liu; Yingyan Huang; Guoyang Xu; Seng Tiong Ho

doi:10.1088/0957-4484/19/15/155303

Nanolithography using spin-coatable ZrO₂ resist and its application to sub-10 nm direct pattern transfer on compound semiconductors

Boyang Liu^*, Yingyan Huang, Guoyang Xu, Seng Tiong Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A typical method for sub-micrometer compound semiconductor dry etching utilizes polymethylmethacrylate (PMMA) to transfer patterns to SiO₂ as intermediate masks, which limits its ability to obtain etching resolutions approaching sub-10 nm. We report a new approach for direct sub-10 nm pattern transfer using sol-gel derived spin-coatable ZrO₂ resist as the mask. The optimal dose of ZrO₂ resist is ∼160 mC cm^-2. The sample InP compound semiconductor etching selectivity to ZrO₂ is over 13:1, with high aspect ratio of 35:1. The smallest etching feature is 9 nm. These results will be very useful for realizing various challenging nanoscale photonic and electronic devices and circuits.

Original language	English (US)
Article number	155303
Journal	Nanotechnology
Volume	19
Issue number	15
DOIs	https://doi.org/10.1088/0957-4484/19/15/155303
State	Published - Apr 16 2008

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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title = "Nanolithography using spin-coatable ZrO2 resist and its application to sub-10 nm direct pattern transfer on compound semiconductors",

abstract = "A typical method for sub-micrometer compound semiconductor dry etching utilizes polymethylmethacrylate (PMMA) to transfer patterns to SiO2 as intermediate masks, which limits its ability to obtain etching resolutions approaching sub-10 nm. We report a new approach for direct sub-10 nm pattern transfer using sol-gel derived spin-coatable ZrO2 resist as the mask. The optimal dose of ZrO2 resist is ∼160 mC cm-2. The sample InP compound semiconductor etching selectivity to ZrO2 is over 13:1, with high aspect ratio of 35:1. The smallest etching feature is 9 nm. These results will be very useful for realizing various challenging nanoscale photonic and electronic devices and circuits.",

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AU - Liu, Boyang

AU - Huang, Yingyan

AU - Xu, Guoyang

AU - Ho, Seng Tiong

PY - 2008/4/16

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AB - A typical method for sub-micrometer compound semiconductor dry etching utilizes polymethylmethacrylate (PMMA) to transfer patterns to SiO2 as intermediate masks, which limits its ability to obtain etching resolutions approaching sub-10 nm. We report a new approach for direct sub-10 nm pattern transfer using sol-gel derived spin-coatable ZrO2 resist as the mask. The optimal dose of ZrO2 resist is ∼160 mC cm-2. The sample InP compound semiconductor etching selectivity to ZrO2 is over 13:1, with high aspect ratio of 35:1. The smallest etching feature is 9 nm. These results will be very useful for realizing various challenging nanoscale photonic and electronic devices and circuits.

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Nanolithography using spin-coatable ZrO₂ resist and its application to sub-10 nm direct pattern transfer on compound semiconductors

Abstract

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