Nanolithography using spin-coatable ZrO2 resist and its application to sub-10 nm direct pattern transfer on compound semiconductors

Boyang Liu*, Yingyan Huang, Guoyang Xu, Seng Tiong Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


A typical method for sub-micrometer compound semiconductor dry etching utilizes polymethylmethacrylate (PMMA) to transfer patterns to SiO2 as intermediate masks, which limits its ability to obtain etching resolutions approaching sub-10 nm. We report a new approach for direct sub-10 nm pattern transfer using sol-gel derived spin-coatable ZrO2 resist as the mask. The optimal dose of ZrO2 resist is ∼160 mC cm-2. The sample InP compound semiconductor etching selectivity to ZrO2 is over 13:1, with high aspect ratio of 35:1. The smallest etching feature is 9 nm. These results will be very useful for realizing various challenging nanoscale photonic and electronic devices and circuits.

Original languageEnglish (US)
Article number155303
Issue number15
StatePublished - Apr 16 2008

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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