Nanometer-scale sharpness in corner-overgrown heterostructures

L. Steinke; P. Cantwell; D. Zakharov; E. Stach; N. J. Zaluzec; A. Fontcuberta I Morral; M. Bichler; G. Abstreiter; M. Grayson

doi:10.1063/1.2988526

Nanometer-scale sharpness in corner-overgrown heterostructures

L. Steinke, P. Cantwell, D. Zakharov, E. Stach, N. J. Zaluzec, A. Fontcuberta I Morral, M. Bichler, G. Abstreiter, M. Grayson^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A corner-overgrown GaAsAlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile 3.5 nm wide. In the AlGaAs layers, we observe self-ordered diagonal stripes, precipitating exactly at the corner, which show increased Al content measured with x-ray spectroscopy. A quantitative model for self-limited growth is adapted to the present case of faceted molecular beam epitaxial growth, and the corner sharpness is discussed in relation to quantum confined structures. We note that corner overgrowth maintains nanometer sharpness after microns of growth, allowing corner-shaped nanostructures.

Original language	English (US)
Article number	193117
Journal	Applied Physics Letters
Volume	93
Issue number	19
DOIs	https://doi.org/10.1063/1.2988526
State	Published - 2008

Funding

This work was supported by the Deutsche Forschungsgemeinschaft (DFG) through contract No. GR 2618/1-1. Work was performed at the Electron Microscopy Center of Argonne National Laboratory, a U.S. Department of Energy Office of Science Laboratory operated under Contract No. DE-AC02-06CH11357 by UChicago Argonne, LLC.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2988526

Cite this

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title = "Nanometer-scale sharpness in corner-overgrown heterostructures",

abstract = "A corner-overgrown GaAsAlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile 3.5 nm wide. In the AlGaAs layers, we observe self-ordered diagonal stripes, precipitating exactly at the corner, which show increased Al content measured with x-ray spectroscopy. A quantitative model for self-limited growth is adapted to the present case of faceted molecular beam epitaxial growth, and the corner sharpness is discussed in relation to quantum confined structures. We note that corner overgrowth maintains nanometer sharpness after microns of growth, allowing corner-shaped nanostructures.",

author = "L. Steinke and P. Cantwell and D. Zakharov and E. Stach and Zaluzec, {N. J.} and {Fontcuberta I Morral}, A. and M. Bichler and G. Abstreiter and M. Grayson",

note = "Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (DFG) through contract No. GR 2618/1-1. Work was performed at the Electron Microscopy Center of Argonne National Laboratory, a U.S. Department of Energy Office of Science Laboratory operated under Contract No. DE-AC02-06CH11357 by UChicago Argonne, LLC.",

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journal = "Applied Physics Letters",

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AU - Steinke, L.

AU - Cantwell, P.

AU - Zakharov, D.

AU - Stach, E.

AU - Zaluzec, N. J.

AU - Fontcuberta I Morral, A.

AU - Bichler, M.

AU - Abstreiter, G.

AU - Grayson, M.

N1 - Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (DFG) through contract No. GR 2618/1-1. Work was performed at the Electron Microscopy Center of Argonne National Laboratory, a U.S. Department of Energy Office of Science Laboratory operated under Contract No. DE-AC02-06CH11357 by UChicago Argonne, LLC.

PY - 2008

Y1 - 2008

N2 - A corner-overgrown GaAsAlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile 3.5 nm wide. In the AlGaAs layers, we observe self-ordered diagonal stripes, precipitating exactly at the corner, which show increased Al content measured with x-ray spectroscopy. A quantitative model for self-limited growth is adapted to the present case of faceted molecular beam epitaxial growth, and the corner sharpness is discussed in relation to quantum confined structures. We note that corner overgrowth maintains nanometer sharpness after microns of growth, allowing corner-shaped nanostructures.

AB - A corner-overgrown GaAsAlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile 3.5 nm wide. In the AlGaAs layers, we observe self-ordered diagonal stripes, precipitating exactly at the corner, which show increased Al content measured with x-ray spectroscopy. A quantitative model for self-limited growth is adapted to the present case of faceted molecular beam epitaxial growth, and the corner sharpness is discussed in relation to quantum confined structures. We note that corner overgrowth maintains nanometer sharpness after microns of growth, allowing corner-shaped nanostructures.

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IS - 19

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Nanometer-scale sharpness in corner-overgrown heterostructures

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