Nanometer-scale sharpness in corner-overgrown heterostructures

L. Steinke, P. Cantwell, D. Zakharov, E. Stach, N. J. Zaluzec, A. Fontcuberta I Morral, M. Bichler, G. Abstreiter, M. Grayson*

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

A corner-overgrown GaAsAlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile 3.5 nm wide. In the AlGaAs layers, we observe self-ordered diagonal stripes, precipitating exactly at the corner, which show increased Al content measured with x-ray spectroscopy. A quantitative model for self-limited growth is adapted to the present case of faceted molecular beam epitaxial growth, and the corner sharpness is discussed in relation to quantum confined structures. We note that corner overgrowth maintains nanometer sharpness after microns of growth, allowing corner-shaped nanostructures.

Original languageEnglish (US)
Article number193117
JournalApplied Physics Letters
Volume93
Issue number19
DOIs
StatePublished - Nov 21 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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