Nanoscale elastic imaging: A new metrology tool for low-k dielectric integration

G. S. Shekhawat, O. V. Kolosov, G. A D Briggs, E. O. Shaffer, S. J. Martin, R. E. Geer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanoscale mechanical properties of metal/low-k polymer damascence test structures. Metal and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution ≤ 10 nm. This technique reveals a RIE-induced hardening of the low-k polymer at the metal/polymer interface and offers new opportunities for metrological reliability evaluation of low-k integration processes.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages96-98
Number of pages3
ISBN (Electronic)0780363272, 9780780363274
DOIs
StatePublished - Jan 1 2000
Event3rd IEEE International Interconnect Technology Conference, IITC 2000 - Burlingame, United States
Duration: Jun 5 2000Jun 7 2000

Publication series

NameProceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Other

Other3rd IEEE International Interconnect Technology Conference, IITC 2000
CountryUnited States
CityBurlingame
Period6/5/006/7/00

ASJC Scopus subject areas

  • Computer Science(all)

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    Shekhawat, G. S., Kolosov, O. V., Briggs, G. A. D., Shaffer, E. O., Martin, S. J., & Geer, R. E. (2000). Nanoscale elastic imaging: A new metrology tool for low-k dielectric integration. In Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000 (pp. 96-98). [854293] (Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.2000.854293