Nanoscale impedance microscopy - A characterization tool for nanoelectronic devices and circuits

Liam S.C. Pingree*, Elizabeth Fabbroni Martin, Kenneth R Shull, Mark Hersam

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

A recently developed conductive atomic force microscopy (cAFM) technique, nanoscale impedance microscopy (NIM), is presented as a characterization strategy for nanoelectronic devices and circuits. NIM concurrently monitors the amplitude and phase response of the current through a cAFM tip in response to a temporally periodic applied bias. By varying the frequency of the driving potential, the resistance and reactance of conductive pathways can be quantitatively determined. Proof-of-principle experiments show 10-nm spatial resolution and ideal frequency-dependent impedance spectroscopy behavior for test circuits connected to electron beam lithographically patterned electrode arrays. Possible applications of NIM include defect detection and failure analysis testing for nanoscale integrated circuits.

Original languageEnglish (US)
Pages (from-to)255-259
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume4
Issue number2
DOIs
StatePublished - Mar 1 2005

Keywords

  • Atomic force microscopy (AFM)
  • Conductive atomic force microscopy (cAFM)
  • Defect detection
  • Failure analysis
  • Impedance spectroscopy
  • Integrated circuits
  • Nanoelectronics
  • Nanoscale impedance microscopy (NIM)

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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