Abstract
A recently developed conductive atomic force microscopy (cAFM) technique, nanoscale impedance microscopy (NIM), is presented as a characterization strategy for nanoelectronic devices and circuits. NIM concurrently monitors the amplitude and phase response of the current through a cAFM tip in response to a temporally periodic applied bias. By varying the frequency of the driving potential, the resistance and reactance of conductive pathways can be quantitatively determined. Proof-of-principle experiments show 10-nm spatial resolution and ideal frequency-dependent impedance spectroscopy behavior for test circuits connected to electron beam lithographically patterned electrode arrays. Possible applications of NIM include defect detection and failure analysis testing for nanoscale integrated circuits.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 255-259 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Nanotechnology |
| Volume | 4 |
| Issue number | 2 |
| DOIs | |
| State | Published - Mar 2005 |
Funding
Manuscript received June 30, 2004; revised September 2, 2004. This work was supported by the National Science Foundation under Award DMR-0134706, Award DMR-0214146, and Award CMS-0304472. L. S. C. Pingree, K. R. Shull, and M. C. Hersam are with the Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208-3108 USA (e-mail: [email protected]). E. F. Martin is with the Logic Technology Group, Intel Corporation, Hills-boro, OR 97124 USA. Digital Object Identifier 10.1109/TNANO.2004.837856
Keywords
- Atomic force microscopy (AFM)
- Conductive atomic force microscopy (cAFM)
- Defect detection
- Failure analysis
- Impedance spectroscopy
- Integrated circuits
- Nanoelectronics
- Nanoscale impedance microscopy (NIM)
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering