Nanoscale magnetic tunnel junction sensors with perpendicular anisotropy sensing layer

Z. M. Zeng; P. Khalili Amiri; J. A. Katine; J. Langer; K. L. Wang; H. W. Jiang

doi:10.1063/1.4744914

Nanoscale magnetic tunnel junction sensors with perpendicular anisotropy sensing layer

Z. M. Zeng^*, P. Khalili Amiri, J. A. Katine, J. Langer, K. L. Wang, H. W. Jiang

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

A nano-scale linear magnetoresistance sensor is demonstrated using magnetic tunnel junctions with an in-plane magnetized reference layer and a sensing layer with interfacial perpendicular anisotropy. We show that the sensor response depends critically on the thickness of the sensing layer since its perpendicular anisotropy is significantly associated with thickness. The optimized sensors exhibit a large field sensitivity of up to 0.02 MR/Oe and a high linear field range of up to 600 Oe. These findings imply that this sensing scheme is a promising method for developing nano-scale magnetic sensors with simple design, high sensitivity, and low power consumption.

Original language	English (US)
Article number	062412
Journal	Applied Physics Letters
Volume	101
Issue number	6
DOIs	https://doi.org/10.1063/1.4744914
State	Published - Aug 6 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4744914

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title = "Nanoscale magnetic tunnel junction sensors with perpendicular anisotropy sensing layer",

abstract = "A nano-scale linear magnetoresistance sensor is demonstrated using magnetic tunnel junctions with an in-plane magnetized reference layer and a sensing layer with interfacial perpendicular anisotropy. We show that the sensor response depends critically on the thickness of the sensing layer since its perpendicular anisotropy is significantly associated with thickness. The optimized sensors exhibit a large field sensitivity of up to 0.02 MR/Oe and a high linear field range of up to 600 Oe. These findings imply that this sensing scheme is a promising method for developing nano-scale magnetic sensors with simple design, high sensitivity, and low power consumption.",

author = "Zeng, {Z. M.} and {Khalili Amiri}, P. and Katine, {J. A.} and J. Langer and Wang, {K. L.} and Jiang, {H. W.}",

note = "Funding Information: This work was supported by the DARPA STT-RAM and Non-Volatile Logic programs, the Nanoelectronics Research Initiative (NRI) through the Western Institute of Nanoelectronics (WIN), and 100 Talents Programme of the Chinese Academy of Sciences.",

year = "2012",

month = aug,

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doi = "10.1063/1.4744914",

language = "English (US)",

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T1 - Nanoscale magnetic tunnel junction sensors with perpendicular anisotropy sensing layer

AU - Zeng, Z. M.

AU - Khalili Amiri, P.

AU - Katine, J. A.

AU - Langer, J.

AU - Wang, K. L.

AU - Jiang, H. W.

N1 - Funding Information: This work was supported by the DARPA STT-RAM and Non-Volatile Logic programs, the Nanoelectronics Research Initiative (NRI) through the Western Institute of Nanoelectronics (WIN), and 100 Talents Programme of the Chinese Academy of Sciences.

PY - 2012/8/6

Y1 - 2012/8/6

N2 - A nano-scale linear magnetoresistance sensor is demonstrated using magnetic tunnel junctions with an in-plane magnetized reference layer and a sensing layer with interfacial perpendicular anisotropy. We show that the sensor response depends critically on the thickness of the sensing layer since its perpendicular anisotropy is significantly associated with thickness. The optimized sensors exhibit a large field sensitivity of up to 0.02 MR/Oe and a high linear field range of up to 600 Oe. These findings imply that this sensing scheme is a promising method for developing nano-scale magnetic sensors with simple design, high sensitivity, and low power consumption.

AB - A nano-scale linear magnetoresistance sensor is demonstrated using magnetic tunnel junctions with an in-plane magnetized reference layer and a sensing layer with interfacial perpendicular anisotropy. We show that the sensor response depends critically on the thickness of the sensing layer since its perpendicular anisotropy is significantly associated with thickness. The optimized sensors exhibit a large field sensitivity of up to 0.02 MR/Oe and a high linear field range of up to 600 Oe. These findings imply that this sensing scheme is a promising method for developing nano-scale magnetic sensors with simple design, high sensitivity, and low power consumption.

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Nanoscale magnetic tunnel junction sensors with perpendicular anisotropy sensing layer

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