Nanoscale molecular-switch crossbar circuits

Yong Chen*, Gun Young Jung, Douglas A A Ohlberg, Xuema Li, Duncan R. Stewart, Jan O. Jeppesen, Kent A. Nielsen, J. Fraser Stoddart, R. Stanley Williams

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

546 Scopus citations

Abstract

Molecular electronics offer an alternative pathway to construct nanoscale circuits in which the critical dimension is naturally associated with molecular sizes. We describe the fabrication and testing of nanoscale molecular-electronic circuits that comprise a molecular monolayer of [2]rotaxanes sandwiched between metal nanowires to form an 8 × 8 crossbar within a 1 μm2 area. The resistance at each cross point of the crossbar can be switched reversibly. By using each cross point as an active memory cell, crossbar circuits were operated as rewritable, nonvolatile memory with a density of 6.4 Obits cm-2. By setting the resistances at specific cross points, two 4 × 4 subarrays of the crossbar were configured to be a nanoscale demultiplexer and multiplexer that were used to read memory bits in a third subarray.

Original languageEnglish (US)
Pages (from-to)462-468
Number of pages7
JournalNanotechnology
Volume14
Issue number4
DOIs
StatePublished - Apr 1 2003

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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