Abstract
The fabrication of nanoscale molecular-switch devices by imprint lithography was presented. The imprinting mold was fabricated into thermally grown silicon oxide on a silicon substrate using electron-beam lithography and reactive-ion etching. Bistable current-voltage characteristics with high on-off ratios and reversible switching properties were observed.
Original language | English (US) |
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Pages (from-to) | 1610-1612 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 10 |
DOIs | |
State | Published - Mar 10 2003 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)