Abstract
N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N, N′ -bis (n -octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3× 10-3 cm2 V s at 5× 105 Vcm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8C N2 and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2× 10-3 and 4.0× 10-3 cm2 V s, respectively, are obtained at 5× 105 Vcm. These results represent the shortest channel length n -channel and ambipolar organic transistors that have been fabricated.
Original language | English (US) |
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Article number | 183102 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 18 |
DOIs | |
State | Published - May 1 2006 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)