Nanoscale n-channel and ambipolar organic field-effect transistors

Taeho Jung*, Byungwook Yoo, Liang Wang, Ananth Dodabalapur, Brooks A. Jones, Antonio Facchetti, Michael R. Wasielewski, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N, N′ -bis (n -octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3× 10-3 cm2 V s at 5× 105 Vcm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8C N2 and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2× 10-3 and 4.0× 10-3 cm2 V s, respectively, are obtained at 5× 105 Vcm. These results represent the shortest channel length n -channel and ambipolar organic transistors that have been fabricated.

Original languageEnglish (US)
Article number183102
JournalApplied Physics Letters
Issue number18
StatePublished - May 1 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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