An effective method for the spatially-controlled writing of embedded, optically transparent, electrically conducting oxide nanowires, through focused ion beam (FIB) implantation into highly resistive transparent metal oxide thin films, was reported. Highly resistive In2O3 thin films were deposited on glass substrates with horizontal dual gun ion assisted deposition (HDG-IAD) system at room temperature from an In2O 3 target. Deposition was controlled with a system pressure of 5.9× 10-2 Pa and an O2 partial pressure of 3.7×10-2 Pa. The In2O3 films were cleaned by sonication for 10 mm. A modified atomic force microscope was used to perform nanoscale electrical mapping of the doped regions, with either boron doped diamond coated probes or Pt coated probes. It was observed that FIB enables the fabrication of embedded, optically transparent, electrically conducting wires.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Feb 9 2009|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering