Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

Renaud Puybaret, David J. Rogers, Youssef El Gmili, Suresh Sundaram, Matthew B. Jordan, Xin Li, Gilles Patriarche, Ferechteh H. Teherani, Eric V. Sandana, Philippe Bove, Paul L. Voss, Ryan McClintock, Manijeh Razeghi, Ian Ferguson, Jean Paul Salvestrini, Abdallah Ougazzaden

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.

Original languageEnglish (US)
Article number195304
JournalNanotechnology
Volume28
Issue number19
DOIs
StatePublished - Apr 19 2017

Keywords

  • InGaN
  • metal organic vapor phase epitaxy-MOVPE
  • nano selective area growth-NSAG
  • zinc oxide-ZnO

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Puybaret, R., Rogers, D. J., Gmili, Y. E., Sundaram, S., Jordan, M. B., Li, X., Patriarche, G., Teherani, F. H., Sandana, E. V., Bove, P., Voss, P. L., McClintock, R., Razeghi, M., Ferguson, I., Salvestrini, J. P., & Ougazzaden, A. (2017). Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates. Nanotechnology, 28(19), [195304]. https://doi.org/10.1088/1361-6528/aa6a43