Nanostructural characterization of TiNiSn-based half-Heusler compounds

M. Matsubara*, R. Asahi, T. Nakagaki, Dieter Isheim, David N Seidman

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We performed nanostructural characterization of TiNiSn-based half-Heusler materials with respect to materials processing and YSb doping. The samples were prepared using radio frequency melting, followed by the liquid quench (LQ) process. It is found that the LQ process employing a BN nozzle enhances the compositional homogeneity and reduces impurities, such as Si and O. Correspondingly, the power factor of (Ti0.5Zr0.25Hf 0.25)NiSn alloys is significantly improved over those fabricated using a silica nozzle and without the LQ process. The nanostructure of the YSb-doped samples is investigated with a laser-assisted local-electrode atom-probe tomography. The results demonstrate homogeneous distributions of Ti, Zr, Hf, Ni, and Sn over the analyzed volume of material, while a one-dimensional chain-like feature of Y are observed with increasing the Y doping concentration, which is the key for controlling the nanostructure for improvement of the thermoelectric properties in these multi-component systems.

Original languageEnglish (US)
Title of host publicationProceedings ICT'07 - 26th International Conference on Thermoelectrics
Pages263-266
Number of pages4
DOIs
StatePublished - Dec 1 2007
EventICT'07 - 26th International Conference on Thermoelectrics - Jeju, Korea, Republic of
Duration: Jun 3 2007Jun 7 2007

Other

OtherICT'07 - 26th International Conference on Thermoelectrics
CountryKorea, Republic of
CityJeju
Period6/3/076/7/07

ASJC Scopus subject areas

  • Engineering(all)

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    Matsubara, M., Asahi, R., Nakagaki, T., Isheim, D., & Seidman, D. N. (2007). Nanostructural characterization of TiNiSn-based half-Heusler compounds. In Proceedings ICT'07 - 26th International Conference on Thermoelectrics (pp. 263-266). [4569475] https://doi.org/10.1109/ICT.2007.4569475