Nanostructure formation in bulk thermoelectric compounds in the pseudo binary PbTe-Sb2Te3 system

Teruyuki Ikeda*, G. Jeffrey Snyder

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Studies on microstructures in thermoelectric compounds in the pseudobinary PbTe-Sb2Te3 system are overviewed and strategies to control the microstructure of thermoelectric compounds are discussed on the basis of the phase diagram and phase transformation theories. The morophology of solidification from the melt results in dendrite or lamellar structure depending on composition. The size-scales of the microstructures obtained by solidification can be controlled from the order of micrometers to tens of micrometers by controlling cooling rates (dendrites) or solidification velocity (lamellae). Lamellar and Widmanstatten structures are obtained by eutectoid (Pb2Sb6Te11 → PbTe + Sb2Te 3) and precipitation (PbTe (Sb2Te3) → PbTe + Sb2Te3) reactions, respectively. These solid-state transformations show features with nanometer size-scales. For the eutectoid reaction the size-scale depends on annealing temperature and time. For precipitation, the size-scale depends on composition as well as cooling rate or annealing temperature. Such behavior can be understood in terms of phase transformation theories.

Original languageEnglish (US)
Title of host publicationThermoelectric Materials 2010 - Growth, Properties, Novel Characterization Methods and Applications
Pages193-204
Number of pages12
StatePublished - Dec 24 2010
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 5 2010Apr 9 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1267
ISSN (Print)0272-9172

Other

Other2010 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/5/104/9/10

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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