Nanowire Kinking Modulates Doping Profiles by Reshaping the Liquid-Solid Growth Interface

Zhiyuan Sun, David N Seidman*, Lincoln James Lauhon

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Dopants modify the electronic properties of semiconductors, including their susceptibility to etching. In semiconductor nanowires doped during growth by the vapor-liquid-solid (VLS) process, it has been shown that nanofaceting of the liquid-solid growth interface influences strongly the radial distribution of dopants. Hence, the combination of facet-dependent doping and dopant selective etching provides a means to tune simultaneously the electronic properties and morphologies of nanowires. Using atom-probe tomography, we investigated the boron dopant distribution in Au catalyzed VLS grown silicon nanowires, which regularly kink between equivalent «112» directions. Segments alternate between radially uniform and nonuniform doping profiles, which we attribute to switching between a concave and convex faceted liquid-solid interface. Dopant selective etching was used to reveal and correlate the shape of the growth interface with the observed anisotropic doping.

Original languageEnglish (US)
Pages (from-to)4518-4525
Number of pages8
JournalNano letters
Volume17
Issue number7
DOIs
StatePublished - Jul 12 2017

Fingerprint

kinking
Nanowires
nanowires
Doping (additives)
etching
Liquids
liquids
profiles
vapors
liquid-solid interfaces
electronics
radial distribution
Etching
flat surfaces
boron
tomography
Electronic properties
magnetic permeability
probes
Vapors

Keywords

  • Nanowire
  • atom-probe tomography
  • dopant
  • liquid-solid interface
  • selective etching
  • vapor-liquid-solid growth

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

@article{de0596e1e98742baaed2aed38ea3840c,
title = "Nanowire Kinking Modulates Doping Profiles by Reshaping the Liquid-Solid Growth Interface",
abstract = "Dopants modify the electronic properties of semiconductors, including their susceptibility to etching. In semiconductor nanowires doped during growth by the vapor-liquid-solid (VLS) process, it has been shown that nanofaceting of the liquid-solid growth interface influences strongly the radial distribution of dopants. Hence, the combination of facet-dependent doping and dopant selective etching provides a means to tune simultaneously the electronic properties and morphologies of nanowires. Using atom-probe tomography, we investigated the boron dopant distribution in Au catalyzed VLS grown silicon nanowires, which regularly kink between equivalent «112» directions. Segments alternate between radially uniform and nonuniform doping profiles, which we attribute to switching between a concave and convex faceted liquid-solid interface. Dopant selective etching was used to reveal and correlate the shape of the growth interface with the observed anisotropic doping.",
keywords = "Nanowire, atom-probe tomography, dopant, liquid-solid interface, selective etching, vapor-liquid-solid growth",
author = "Zhiyuan Sun and Seidman, {David N} and Lauhon, {Lincoln James}",
year = "2017",
month = "7",
day = "12",
doi = "10.1021/acs.nanolett.7b02071",
language = "English (US)",
volume = "17",
pages = "4518--4525",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "7",

}

Nanowire Kinking Modulates Doping Profiles by Reshaping the Liquid-Solid Growth Interface. / Sun, Zhiyuan; Seidman, David N; Lauhon, Lincoln James.

In: Nano letters, Vol. 17, No. 7, 12.07.2017, p. 4518-4525.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Nanowire Kinking Modulates Doping Profiles by Reshaping the Liquid-Solid Growth Interface

AU - Sun, Zhiyuan

AU - Seidman, David N

AU - Lauhon, Lincoln James

PY - 2017/7/12

Y1 - 2017/7/12

N2 - Dopants modify the electronic properties of semiconductors, including their susceptibility to etching. In semiconductor nanowires doped during growth by the vapor-liquid-solid (VLS) process, it has been shown that nanofaceting of the liquid-solid growth interface influences strongly the radial distribution of dopants. Hence, the combination of facet-dependent doping and dopant selective etching provides a means to tune simultaneously the electronic properties and morphologies of nanowires. Using atom-probe tomography, we investigated the boron dopant distribution in Au catalyzed VLS grown silicon nanowires, which regularly kink between equivalent «112» directions. Segments alternate between radially uniform and nonuniform doping profiles, which we attribute to switching between a concave and convex faceted liquid-solid interface. Dopant selective etching was used to reveal and correlate the shape of the growth interface with the observed anisotropic doping.

AB - Dopants modify the electronic properties of semiconductors, including their susceptibility to etching. In semiconductor nanowires doped during growth by the vapor-liquid-solid (VLS) process, it has been shown that nanofaceting of the liquid-solid growth interface influences strongly the radial distribution of dopants. Hence, the combination of facet-dependent doping and dopant selective etching provides a means to tune simultaneously the electronic properties and morphologies of nanowires. Using atom-probe tomography, we investigated the boron dopant distribution in Au catalyzed VLS grown silicon nanowires, which regularly kink between equivalent «112» directions. Segments alternate between radially uniform and nonuniform doping profiles, which we attribute to switching between a concave and convex faceted liquid-solid interface. Dopant selective etching was used to reveal and correlate the shape of the growth interface with the observed anisotropic doping.

KW - Nanowire

KW - atom-probe tomography

KW - dopant

KW - liquid-solid interface

KW - selective etching

KW - vapor-liquid-solid growth

UR - http://www.scopus.com/inward/record.url?scp=85024395522&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85024395522&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.7b02071

DO - 10.1021/acs.nanolett.7b02071

M3 - Article

VL - 17

SP - 4518

EP - 4525

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 7

ER -