Narrow gap semiconductor photodiodes

Antoni Rogalski*, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations


At present efforts in infrared (IR) detector research are directed towards improving the performance of single element devices and large electronically scanned arrays, and to obtain higher operating temperature of detectors. Another important aim is to make IR detectors cheaper and more convenient to use. Investigations of the performance of narrow gap semiconductor photodiodes are presented. Recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternative to HgCdTe III-V and II-VI ternary alloy photodiodes, and monolithic lead chalcogenide photodiodes. Investigations of the performance of photodiodes operated at short wavelength IR (SWIR), 1-3 μm; medium wavelength IR (MWIR), 3-5 μm; and long wavelength IR (LWIR), 8-14 μm; are presented. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors. HgCdTe detectors with background limited performance operate with thermoelectric coolers in the medium wavelength range, instead the long wavelength detectors operate at ≈ 100 K. HgCdTe is characterized by high absorption coefficient and quantum efficiency and relatively low thermal generation rate compared to other detectors.

Original languageEnglish (US)
Pages (from-to)2-13
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Dec 1 1998
EventPhotodetectors: Materials and Devices III - San Jose, CA, United States
Duration: Jan 28 1998Jan 30 1998


  • HgCdTe photodiodes
  • InGaAs photodiodes
  • InSb photodiodes
  • Infrared detectors
  • Lead salt photodiodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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