Ne-He bubble formation in co-implanted Si(111) substrates

L. G. Matos, Roberto dos Reis, R. L. Maltez*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We have studied Si(111) substrates co-implanted with Ne and He, and also separately implanted with these ions, as a function of the annealing temperature. Ne implantations were performed up to fluences of 1 × 10 15 and 5 × 1015 cm- 2 while keeping the substrate at 350 C temperature. He implantations were performed at room temperature up to fluences of 5 × 1015 and 1 × 10 16 cm- 2. The co-implanted samples were first implanted by Ne and then by He ions. These samples were submitted to rapid thermal annealing with temperatures ranging from 350 to 1000 C. Rutherford backscattering spectrometry/channeling measurements have demonstrated temperature dependent beam dechanneling starting at the implanted ion region. The co-implanted system with 1 × 1015 Ne/cm2 and 1 × 1016 He/cm2 shows an improved dechanneling stability in the range of 400-800 C. Transmission electron microscopy has demonstrated a bubble morphology of Ne-He similar to the sample implanted only with Ne, even for a Ne:He co-implantation ratio of 1:10. We have concluded that the observed dechanneling is mainly due to Ne residual implantation damage and that the annealing behavior of such systems is very different from the He implanted samples.

Original languageEnglish (US)
Pages (from-to)465-469
Number of pages5
JournalThin Solid Films
StatePublished - Dec 2 2013


  • He ion implantation
  • Hybrid bubble system
  • Ne ion implantation
  • Rutherford backscattering spectrometry/channeling
  • Silicon substrate
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Fingerprint Dive into the research topics of 'Ne-He bubble formation in co-implanted Si(111) substrates'. Together they form a unique fingerprint.

Cite this