TY - JOUR
T1 - Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation
AU - Hood, Andrew
AU - Delaunay, Pierre Yves
AU - Hoffman, Darin
AU - Nguyen, Binh Minh
AU - Wei, Yajun
AU - Razeghi, Manijeh
AU - Nathan, Vaidya
PY - 2007
Y1 - 2007
N2 - Effective surface passivation of type-II InAsGaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment nor time, has been prepared by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer. Passivated photodiodes, with dimensions ranging from 400×400 to 25×25 μ m2, with a cutoff wavelength of ∼11 μm, exhibited near bulk-limited R0 A values of ∼12 cm2, surface resistivities in excess of 104 cm, and very uniform current-voltage behavior at 77 K.
AB - Effective surface passivation of type-II InAsGaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment nor time, has been prepared by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer. Passivated photodiodes, with dimensions ranging from 400×400 to 25×25 μ m2, with a cutoff wavelength of ∼11 μm, exhibited near bulk-limited R0 A values of ∼12 cm2, surface resistivities in excess of 104 cm, and very uniform current-voltage behavior at 77 K.
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U2 - 10.1063/1.2747172
DO - 10.1063/1.2747172
M3 - Article
AN - SCOPUS:34250731265
SN - 0003-6951
VL - 90
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 23
M1 - 233513
ER -