Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation

Andrew Hood*, Pierre Yves Delaunay, Darin Hoffman, Binh Minh Nguyen, Yajun Wei, Manijeh Razeghi, Vaidya Nathan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

99 Scopus citations

Abstract

Effective surface passivation of type-II InAsGaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment nor time, has been prepared by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer. Passivated photodiodes, with dimensions ranging from 400×400 to 25×25 μ m2, with a cutoff wavelength of ∼11 μm, exhibited near bulk-limited R0 A values of ∼12 cm2, surface resistivities in excess of 104 cm, and very uniform current-voltage behavior at 77 K.

Original languageEnglish (US)
Article number233513
JournalApplied Physics Letters
Volume90
Issue number23
DOIs
StatePublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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