Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer

Alexander Tselev; Vinod K. Sangwan; Deep Jariwala; Tobin J. Marks; Lincoln J. Lauhon; Mark C. Hersam; Sergei V. Kalinin

doi:10.1063/1.4847675

Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer

Alexander Tselev^*, Vinod K. Sangwan, Deep Jariwala, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam, Sergei V. Kalinin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al₂O₃ and HfO₂ films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al₂O ₃/HfO₂ stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.

Original language	English (US)
Article number	243105
Journal	Applied Physics Letters
Volume	103
Issue number	24
DOIs	https://doi.org/10.1063/1.4847675
State	Published - Dec 9 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4847675

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@article{35a763ab8fb04849813766fd106c6c6b,

title = "Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer",

abstract = "Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al2O3 and HfO2 films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al2O 3/HfO2 stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.",

author = "Alexander Tselev and Sangwan, {Vinod K.} and Deep Jariwala and Marks, {Tobin J.} and Lauhon, {Lincoln J.} and Hersam, {Mark C.} and Kalinin, {Sergei V.}",

note = "Funding Information: A portion of this research (A.T., S.V.K.) was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy. This research was also supported by the Office of Naval Research (N00014-11-1-0463), a W. M. Keck Foundation Science and Engineering Grant, and the Materials Research Science and Engineering Center (MRSEC) of Northwestern University (NSF DMR-1121262). ",

year = "2013",

month = dec,

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doi = "10.1063/1.4847675",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

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T1 - Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer

AU - Tselev, Alexander

AU - Sangwan, Vinod K.

AU - Jariwala, Deep

AU - Marks, Tobin J.

AU - Lauhon, Lincoln J.

AU - Hersam, Mark C.

AU - Kalinin, Sergei V.

N1 - Funding Information: A portion of this research (A.T., S.V.K.) was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy. This research was also supported by the Office of Naval Research (N00014-11-1-0463), a W. M. Keck Foundation Science and Engineering Grant, and the Materials Research Science and Engineering Center (MRSEC) of Northwestern University (NSF DMR-1121262).

PY - 2013/12/9

Y1 - 2013/12/9

N2 - Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al2O3 and HfO2 films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al2O 3/HfO2 stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.

AB - Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al2O3 and HfO2 films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al2O 3/HfO2 stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.

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Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer

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