Near-field optical microscopy and spectroscopy is emerging as a powerful tool for the investigation of semiconductor structures. Tunable excitation combined with sub-wavelength resolution is providing an unprecedented level of detail on the local optical properties of semiconductor structures. Recent near-field optical studies have addressed issues of laser diode mode profiling, minority carrier transport, near-field photocurrent response of quantum-well structures and laser diodes, imaging of local waveguide properties, and location and studies of dislocations in semiconductor thin films. We present results on the intrinsic resolution limitations of near-field photoconductivity in quantum-well heterostructures and demonstrate that the resolution depends strongly on the amount of evanescent and propagating field components in the semiconductor. Spectroscopic mode-profiling of high-power laser diode emission details the spatial dependence of multiple spectral modes. This paper presents an overview of NSOM techniques for semiconductor systems, its limitations, and present status.
|Original language||English (US)|
|Number of pages||9|
|Journal||IEEE Journal on Selected Topics in Quantum Electronics|
|State||Published - Dec 1995|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering