Near-infrared transparent electrodes for precision Teng-Man electro-optic measurements: In 2 O 3 thin-film electrodes with tunable near-infrared transparency

Lian Wang; Yu Yang; Tobin J. Marks; Zhifu Liu; Seng Tiong Ho

doi:10.1063/1.2089184

Near-infrared transparent electrodes for precision Teng-Man electro-optic measurements: In ₂ O ₃ thin-film electrodes with tunable near-infrared transparency

Lian Wang, Yu Yang, Tobin J. Marks^*, Zhifu Liu, Seng Tiong Ho

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Highly near-infrared (NIR) transparent In2 O3 thin films have been grown by ion-assisted deposition at room temperature, and the optical and electrical properties characterized. NIR transparency and the plasma edge frequency can be engineered by control of the film deposition conditions. As-deposited In2 O3 thin films were employed as transparent electrodes for direct thin film electro-optic (EO) characterization measurements via the Teng-Man technique. Using LiNbO3 as the standard, the relationship between electrode NIR transparency and Teng-Man EO measurement accuracy was evaluated. It is found that In2 O3 electrodes can be tailored to be highly NIR transparent, thus providing far more accurate Teng-Man EO coefficient quantification than tin-doped indium oxide. In addition, the EO coefficients of stilbazolium-based self-assembled superlattice thin films were directly determined for the first time using an optimized In2 O3 electrode. EO coefficients r33 of 42.2, 13.1, and 6.4 pmV are obtained at 633, 1064, and 1310 nm, respectively.

Original language	English (US)
Article number	161107
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	16
DOIs	https://doi.org/10.1063/1.2089184
State	Published - Oct 17 2005

Funding

The authors thank DARPA/ONR (N00014-04-1-0093/P0001) and the NSF-MRSEC program through the Northwestern Materials Research Center (DMR-0076097) for support of this research.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2089184

Cite this

@article{63b64a90d7064c6c81bd788c3709cc48,

title = "Near-infrared transparent electrodes for precision Teng-Man electro-optic measurements: In 2 O 3 thin-film electrodes with tunable near-infrared transparency",

abstract = "Highly near-infrared (NIR) transparent In2 O3 thin films have been grown by ion-assisted deposition at room temperature, and the optical and electrical properties characterized. NIR transparency and the plasma edge frequency can be engineered by control of the film deposition conditions. As-deposited In2 O3 thin films were employed as transparent electrodes for direct thin film electro-optic (EO) characterization measurements via the Teng-Man technique. Using LiNbO3 as the standard, the relationship between electrode NIR transparency and Teng-Man EO measurement accuracy was evaluated. It is found that In2 O3 electrodes can be tailored to be highly NIR transparent, thus providing far more accurate Teng-Man EO coefficient quantification than tin-doped indium oxide. In addition, the EO coefficients of stilbazolium-based self-assembled superlattice thin films were directly determined for the first time using an optimized In2 O3 electrode. EO coefficients r33 of 42.2, 13.1, and 6.4 pmV are obtained at 633, 1064, and 1310 nm, respectively.",

author = "Lian Wang and Yu Yang and Marks, {Tobin J.} and Zhifu Liu and Ho, {Seng Tiong}",

note = "Funding Information: The authors thank DARPA/ONR (N00014-04-1-0093/P0001) and the NSF-MRSEC program through the Northwestern Materials Research Center (DMR-0076097) for support of this research.",

year = "2005",

month = oct,

day = "17",

doi = "10.1063/1.2089184",

language = "English (US)",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Near-infrared transparent electrodes for precision Teng-Man electro-optic measurements

T2 - In 2 O 3 thin-film electrodes with tunable near-infrared transparency

AU - Wang, Lian

AU - Yang, Yu

AU - Marks, Tobin J.

AU - Liu, Zhifu

AU - Ho, Seng Tiong

N1 - Funding Information: The authors thank DARPA/ONR (N00014-04-1-0093/P0001) and the NSF-MRSEC program through the Northwestern Materials Research Center (DMR-0076097) for support of this research.

PY - 2005/10/17

Y1 - 2005/10/17

N2 - Highly near-infrared (NIR) transparent In2 O3 thin films have been grown by ion-assisted deposition at room temperature, and the optical and electrical properties characterized. NIR transparency and the plasma edge frequency can be engineered by control of the film deposition conditions. As-deposited In2 O3 thin films were employed as transparent electrodes for direct thin film electro-optic (EO) characterization measurements via the Teng-Man technique. Using LiNbO3 as the standard, the relationship between electrode NIR transparency and Teng-Man EO measurement accuracy was evaluated. It is found that In2 O3 electrodes can be tailored to be highly NIR transparent, thus providing far more accurate Teng-Man EO coefficient quantification than tin-doped indium oxide. In addition, the EO coefficients of stilbazolium-based self-assembled superlattice thin films were directly determined for the first time using an optimized In2 O3 electrode. EO coefficients r33 of 42.2, 13.1, and 6.4 pmV are obtained at 633, 1064, and 1310 nm, respectively.

AB - Highly near-infrared (NIR) transparent In2 O3 thin films have been grown by ion-assisted deposition at room temperature, and the optical and electrical properties characterized. NIR transparency and the plasma edge frequency can be engineered by control of the film deposition conditions. As-deposited In2 O3 thin films were employed as transparent electrodes for direct thin film electro-optic (EO) characterization measurements via the Teng-Man technique. Using LiNbO3 as the standard, the relationship between electrode NIR transparency and Teng-Man EO measurement accuracy was evaluated. It is found that In2 O3 electrodes can be tailored to be highly NIR transparent, thus providing far more accurate Teng-Man EO coefficient quantification than tin-doped indium oxide. In addition, the EO coefficients of stilbazolium-based self-assembled superlattice thin films were directly determined for the first time using an optimized In2 O3 electrode. EO coefficients r33 of 42.2, 13.1, and 6.4 pmV are obtained at 633, 1064, and 1310 nm, respectively.

UR - http://www.scopus.com/inward/record.url?scp=28344435140&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28344435140&partnerID=8YFLogxK

U2 - 10.1063/1.2089184

DO - 10.1063/1.2089184

M3 - Article

AN - SCOPUS:28344435140

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161107

ER -