Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)

Yinjun Zhang*, Simon Gautier, Chu Young Cho, Erdem Cicek, Zahra Vashaei, Ryan McClintock, Can Bayram, Yanbo Bai, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

We report on the growth, fabrication, and device characterization of AlGaN-based thin-film ultraviolet (UV) (λ ∼ 359 nm) light emitting diodes (LEDs). First, AlN/Si(111) template is patterned. Then, a fully coalesced 7-μm-thick lateral epitaxial overgrowth (LEO) of AlN layer is realized on patterned AlN/Si(111) template followed by UV LED epi-regrowth. Metalorganic chemical vapor deposition is employed to optimize LEO AlN and UV LED epitaxy. Back-emission UV LEDs are fabricated and flip-chip bonded to AlN heat sinks followed by Si(111) substrate removal. A peak pulsed power and slope efficiency of ∼0.6 mW and ∼1.3 μW/mA are demonstrated from these thin-film UV LEDs, respectively. For comparison, top-emission UV LEDs are fabricated and back-emission LEDs are shown to extract 50% more light than top-emission ones.

Original languageEnglish (US)
Article number011106
JournalApplied Physics Letters
Volume102
Issue number1
DOIs
StatePublished - Jan 7 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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