Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes

Darin Hoffman; Aaron Gin; Yajun Wei; Andrew Hood; Frank Fuchs; Manijeh Razeghi

doi:10.1109/JQE.2005.858783

Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes

Darin Hoffman^*, Aaron Gin, Yajun Wei, Andrew Hood, Frank Fuchs, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.

Original language	English (US)
Pages (from-to)	1474-1479
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	41
Issue number	12
DOIs	https://doi.org/10.1109/JQE.2005.858783
State	Published - Dec 2005

Keywords

Electroluminescence
Negative luminescence
Semiconductor device radiation effects

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2005.858783

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@article{feb888250fb943f3a8f1cb4cf552c817,

title = "Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes",

abstract = "The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.",

keywords = "Electroluminescence, Negative luminescence, Semiconductor device radiation effects",

author = "Darin Hoffman and Aaron Gin and Yajun Wei and Andrew Hood and Frank Fuchs and Manijeh Razeghi",

year = "2005",

month = dec,

doi = "10.1109/JQE.2005.858783",

language = "English (US)",

volume = "41",

pages = "1474--1479",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes

AU - Hoffman, Darin

AU - Gin, Aaron

AU - Wei, Yajun

AU - Hood, Andrew

AU - Fuchs, Frank

AU - Razeghi, Manijeh

PY - 2005/12

Y1 - 2005/12

N2 - The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.

AB - The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.

KW - Electroluminescence

KW - Negative luminescence

KW - Semiconductor device radiation effects

UR - http://www.scopus.com/inward/record.url?scp=29244480031&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29244480031&partnerID=8YFLogxK

U2 - 10.1109/JQE.2005.858783

DO - 10.1109/JQE.2005.858783

M3 - Article

AN - SCOPUS:29244480031

VL - 41

SP - 1474

EP - 1479

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 12

ER -

Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes

Abstract

Keywords

ASJC Scopus subject areas

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