Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes

Darin Hoffman; Aaron Gin; Yajun Wei; Andrew Hood; Frank Fuchs; Manijeh Razeghi

doi:10.1109/JQE.2005.858783

Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes

Darin Hoffman^*, Aaron Gin, Yajun Wei, Andrew Hood, Frank Fuchs, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.

Original language	English (US)
Pages (from-to)	1474-1479
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	41
Issue number	12
DOIs	https://doi.org/10.1109/JQE.2005.858783
State	Published - Dec 1 2005

Keywords

Electroluminescence
Negative luminescence
Semiconductor device radiation effects

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes",

abstract = "The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.",

keywords = "Electroluminescence, Negative luminescence, Semiconductor device radiation effects",

author = "Darin Hoffman and Aaron Gin and Yajun Wei and Andrew Hood and Frank Fuchs and Manijeh Razeghi",

year = "2005",

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doi = "10.1109/JQE.2005.858783",

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T1 - Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes

AU - Hoffman, Darin

AU - Gin, Aaron

AU - Wei, Yajun

AU - Hood, Andrew

AU - Fuchs, Frank

AU - Razeghi, Manijeh

PY - 2005/12/1

Y1 - 2005/12/1

N2 - The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.

AB - The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.

KW - Electroluminescence

KW - Negative luminescence

KW - Semiconductor device radiation effects

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