Abstract
The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.
Original language | English (US) |
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Pages (from-to) | 1474-1479 |
Number of pages | 6 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 41 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2005 |
Keywords
- Electroluminescence
- Negative luminescence
- Semiconductor device radiation effects
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering