Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes

Darin Hoffman*, Aaron Gin, Yajun Wei, Andrew Hood, Frank Fuchs, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.

Original languageEnglish (US)
Pages (from-to)1474-1479
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume41
Issue number12
DOIs
StatePublished - Dec 1 2005

Keywords

  • Electroluminescence
  • Negative luminescence
  • Semiconductor device radiation effects

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes'. Together they form a unique fingerprint.

Cite this