Negative differential resistance at room temperature from resonant tunnelling in galnas/lnp double-barrier heterostructures

M. Razeghi; A. Tardella; R. A. Davies; A. P. Long; M. J. Kelly; E. Britton; C. Boothroyd; W. M. Stobbs

doi:10.1049/el:19870082

Negative differential resistance at room temperature from resonant tunnelling in galnas/lnp double-barrier heterostructures

M. Razeghi, A. Tardella, R. A. Davies, A. P. Long, M. J. Kelly, E. Britton, C. Boothroyd, W. M. Stobbs

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We report the first observation of room-temperature negative differential resistance in the GalnAs/lnP materials system. The double-barrier structure examined was grown by organometallic chemical vapour deposition.

Original language	English (US)
Pages (from-to)	116-117
Number of pages	2
Journal	Electronics Letters
Volume	23
Issue number	3
DOIs	https://doi.org/10.1049/el:19870082
State	Published - Jan 1 1987

Keywords

Resonant tunnelling
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19870082

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title = "Negative differential resistance at room temperature from resonant tunnelling in galnas/lnp double-barrier heterostructures",

abstract = "We report the first observation of room-temperature negative differential resistance in the GalnAs/lnP materials system. The double-barrier structure examined was grown by organometallic chemical vapour deposition.",

keywords = "Resonant tunnelling, Semiconductor devices and materials",

author = "M. Razeghi and A. Tardella and Davies, \{R. A.\} and Long, \{A. P.\} and Kelly, \{M. J.\} and E. Britton and C. Boothroyd and Stobbs, \{W. M.\}",

year = "1987",

month = jan,

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doi = "10.1049/el:19870082",

language = "English (US)",

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journal = "Electronics Letters",

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T1 - Negative differential resistance at room temperature from resonant tunnelling in galnas/lnp double-barrier heterostructures

AU - Razeghi, M.

AU - Tardella, A.

AU - Davies, R. A.

AU - Long, A. P.

AU - Kelly, M. J.

AU - Britton, E.

AU - Boothroyd, C.

AU - Stobbs, W. M.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - We report the first observation of room-temperature negative differential resistance in the GalnAs/lnP materials system. The double-barrier structure examined was grown by organometallic chemical vapour deposition.

AB - We report the first observation of room-temperature negative differential resistance in the GalnAs/lnP materials system. The double-barrier structure examined was grown by organometallic chemical vapour deposition.

KW - Resonant tunnelling

KW - Semiconductor devices and materials

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JO - Electronics Letters

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ER -

Negative differential resistance at room temperature from resonant tunnelling in galnas/lnp double-barrier heterostructures

Abstract

Keywords

ASJC Scopus subject areas

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