Negative differential resistance at room temperature from resonant tunnelling in galnas/lnp double-barrier heterostructures

M. Razeghi, A. Tardella, R. A. Davies, A. P. Long, M. J. Kelly, E. Britton, C. Boothroyd, W. M. Stobbs

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We report the first observation of room-temperature negative differential resistance in the GalnAs/lnP materials system. The double-barrier structure examined was grown by organometallic chemical vapour deposition.

Original languageEnglish (US)
Pages (from-to)116-117
Number of pages2
JournalElectronics Letters
Volume23
Issue number3
DOIs
StatePublished - Jan 1 1987

Keywords

  • Resonant tunnelling
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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