Negative luminescence of InAs/GaSb superlattice photodiodes

F. Fuchs*, D. Hoffmann, A. Gin, A. Hood, Y. Wei, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

The emission behaviour of InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 μm and 13 μm. With a radiometric calibration of the experimental set-up the internal quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The quantitative analysis of the internal quantum efficiency of the non-equilibrium radiation enables the determination of the Auger coefficient.

Original languageEnglish (US)
Pages (from-to)444-447
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number3
DOIs
StatePublished - May 8 2006
Event32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany
Duration: Sep 18 2005Sep 22 2005

ASJC Scopus subject areas

  • Condensed Matter Physics

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