Negative luminescence of InAs/GaSb superlattice photodiodes

F. Fuchs; D. Hoffmann; A. Gin; A. Hood; Y. Wei; M. Razeghi

doi:10.1002/pssc.200564175

Negative luminescence of InAs/GaSb superlattice photodiodes

F. Fuchs^*, D. Hoffmann, A. Gin, A. Hood, Y. Wei, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The emission behaviour of InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 μm and 13 μm. With a radiometric calibration of the experimental set-up the internal quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The quantitative analysis of the internal quantum efficiency of the non-equilibrium radiation enables the determination of the Auger coefficient.

Original language	English (US)
Pages (from-to)	444-447
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	3
Issue number	3
DOIs	https://doi.org/10.1002/pssc.200564175
State	Published - 2006
Event	32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany Duration: Sep 18 2005 → Sep 22 2005

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200564175

Cite this

@article{8dcd8f5dbd954e45abc4028e3a7777ea,

title = "Negative luminescence of InAs/GaSb superlattice photodiodes",

abstract = "The emission behaviour of InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 μm and 13 μm. With a radiometric calibration of the experimental set-up the internal quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The quantitative analysis of the internal quantum efficiency of the non-equilibrium radiation enables the determination of the Auger coefficient.",

author = "F. Fuchs and D. Hoffmann and A. Gin and A. Hood and Y. Wei and M. Razeghi",

year = "2006",

doi = "10.1002/pssc.200564175",

language = "English (US)",

volume = "3",

pages = "444--447",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "3",

note = "32nd International Symposium on Compound Semiconductors, ISCS-2005 ; Conference date: 18-09-2005 Through 22-09-2005",

}

TY - JOUR

T1 - Negative luminescence of InAs/GaSb superlattice photodiodes

AU - Fuchs, F.

AU - Hoffmann, D.

AU - Gin, A.

AU - Hood, A.

AU - Wei, Y.

AU - Razeghi, M.

PY - 2006

Y1 - 2006

N2 - The emission behaviour of InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 μm and 13 μm. With a radiometric calibration of the experimental set-up the internal quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The quantitative analysis of the internal quantum efficiency of the non-equilibrium radiation enables the determination of the Auger coefficient.

AB - The emission behaviour of InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 μm and 13 μm. With a radiometric calibration of the experimental set-up the internal quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The quantitative analysis of the internal quantum efficiency of the non-equilibrium radiation enables the determination of the Auger coefficient.

UR - http://www.scopus.com/inward/record.url?scp=33646187527&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646187527&partnerID=8YFLogxK

U2 - 10.1002/pssc.200564175

DO - 10.1002/pssc.200564175

M3 - Conference article

AN - SCOPUS:33646187527

SN - 1610-1634

VL - 3

SP - 444

EP - 447

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 3

T2 - 32nd International Symposium on Compound Semiconductors, ISCS-2005

Y2 - 18 September 2005 through 22 September 2005

ER -

Negative luminescence of InAs/GaSb superlattice photodiodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this