Negative luminescence of long-wavelength InAs/GaSb superlattice photodiodes

Darin Hoffman; Andrew Hood; Yajun Wei; Aaron Gin; Frank Fuchs; Manijeh Razeghi

doi:10.1063/1.2130536

Negative luminescence of long-wavelength InAs/GaSb superlattice photodiodes

Darin Hoffman, Andrew Hood, Yajun Wei, Aaron Gin, Frank Fuchs, Manijeh Razeghi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The electrically pumped emission behavior of binary type-II InAsGaSb superlattice photodiodes has been studied in the spectral range between 8 μm and 13 μm. With a radiometric calibration of the experimental setup, the internal and external quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The negative luminescence efficiency approaches values as high as 35% without antireflection coating. The temperature dependence of the internal quantum efficiency near zero-bias voltage allows for the determination of the electron-hole-electron Auger recombination coefficient of Γn =1× 1024 cm6 s-1.

Original language	English (US)
Article number	201103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	20
DOIs	https://doi.org/10.1063/1.2130536
State	Published - Nov 14 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Negative luminescence of long-wavelength InAs/GaSb superlattice photodiodes",

abstract = "The electrically pumped emission behavior of binary type-II InAsGaSb superlattice photodiodes has been studied in the spectral range between 8 μm and 13 μm. With a radiometric calibration of the experimental setup, the internal and external quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The negative luminescence efficiency approaches values as high as 35% without antireflection coating. The temperature dependence of the internal quantum efficiency near zero-bias voltage allows for the determination of the electron-hole-electron Auger recombination coefficient of Γn =1× 1024 cm6 s-1.",

author = "Darin Hoffman and Andrew Hood and Yajun Wei and Aaron Gin and Frank Fuchs and Manijeh Razeghi",

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T1 - Negative luminescence of long-wavelength InAs/GaSb superlattice photodiodes

AU - Hoffman, Darin

AU - Hood, Andrew

AU - Wei, Yajun

AU - Gin, Aaron

AU - Fuchs, Frank

AU - Razeghi, Manijeh

PY - 2005/11/14

Y1 - 2005/11/14

N2 - The electrically pumped emission behavior of binary type-II InAsGaSb superlattice photodiodes has been studied in the spectral range between 8 μm and 13 μm. With a radiometric calibration of the experimental setup, the internal and external quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The negative luminescence efficiency approaches values as high as 35% without antireflection coating. The temperature dependence of the internal quantum efficiency near zero-bias voltage allows for the determination of the electron-hole-electron Auger recombination coefficient of Γn =1× 1024 cm6 s-1.

AB - The electrically pumped emission behavior of binary type-II InAsGaSb superlattice photodiodes has been studied in the spectral range between 8 μm and 13 μm. With a radiometric calibration of the experimental setup, the internal and external quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The negative luminescence efficiency approaches values as high as 35% without antireflection coating. The temperature dependence of the internal quantum efficiency near zero-bias voltage allows for the determination of the electron-hole-electron Auger recombination coefficient of Γn =1× 1024 cm6 s-1.

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