Negative luminescence of long-wavelength InAs/GaSb superlattice photodiodes

Darin Hoffman, Andrew Hood, Yajun Wei, Aaron Gin, Frank Fuchs, Manijeh Razeghi

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The electrically pumped emission behavior of binary type-II InAsGaSb superlattice photodiodes has been studied in the spectral range between 8 μm and 13 μm. With a radiometric calibration of the experimental setup, the internal and external quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The negative luminescence efficiency approaches values as high as 35% without antireflection coating. The temperature dependence of the internal quantum efficiency near zero-bias voltage allows for the determination of the electron-hole-electron Auger recombination coefficient of Γn =1× 1024 cm6 s-1.

Original languageEnglish (US)
Article number201103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number20
DOIs
StatePublished - Nov 14 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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