Abstract
The electrically pumped emission behavior of binary type-II InAsGaSb superlattice photodiodes has been studied in the spectral range between 8 μm and 13 μm. With a radiometric calibration of the experimental setup, the internal and external quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The negative luminescence efficiency approaches values as high as 35% without antireflection coating. The temperature dependence of the internal quantum efficiency near zero-bias voltage allows for the determination of the electron-hole-electron Auger recombination coefficient of Γn =1× 1024 cm6 s-1.
Original language | English (US) |
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Article number | 201103 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 20 |
DOIs | |
State | Published - Nov 14 2005 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)