The magnetotransport properties of an In0.95Mn0.05As thin film grown by metal-organic vapor phase epitaxy were measured. Resistivity was measured over the temperature range of 5 to 300 K. The resistivity decreased with increasing temperature from 90 to 0.05 Ω-cm. The field dependence of the low temperature magnetoresistance was measured. A negative magnetoresistance was observed below 17 K with a hysteresis in the magnetoresistance observed at 5 K. The magnetoresistance as a function of applied field was described by the Khosla-Fischer model for spin scattering of carriers in an impurity band.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Aug 2004|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics