Negative magnetoresistance in (In,Mn)As semiconductors

S. J. May*, A. J. Blattner, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


The magnetotransport properties of an In0.95Mn0.05As thin film grown by metal-organic vapor phase epitaxy were measured. Resistivity was measured over the temperature range of 5 to 300 K. The resistivity decreased with increasing temperature from 90 to 0.05 Ω-cm. The field dependence of the low temperature magnetoresistance was measured. A negative magnetoresistance was observed below 17 K with a hysteresis in the magnetoresistance observed at 5 K. The magnetoresistance as a function of applied field was described by the Khosla-Fischer model for spin scattering of carriers in an impurity band.

Original languageEnglish (US)
Article number073303
Pages (from-to)073303-1-073303-4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
StatePublished - Aug 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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