Negative magnetoresistance in metal/oxide/lnMnAs tunnel junctions

S. J. May, P. J. Phillips, B. W. Wessels

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The electronic and magnetoresistive properties of metal/oxide/p-InMnAs magnetic tunnel junctions have been characterized. Ni and Al were each used as the metal electrode, while A12O3 and SiO2 layers were utilized as tunnel barriers. A conductance well, with a width ∼ 100 meV less than the band gap of InMnAs, is observed for all samples, consistent with tunneling between a metal and p-type degenerate semiconductor. At temperatures up to 150 K, a negative magnetoresistance is measured in the tunnel junctions. The absence of the normal tunnel magnetoresistance effect in the Ni-based junctions is attributed to strong interlayer coupling between the ferromagnetic Ni and InMnAs layers.

Original languageEnglish (US)
Article number053912
JournalJournal of Applied Physics
Issue number5
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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