New anisotropic behavior of quantum Hall resistance in (1 1 0) GaAs heterostructures at mK temperatures and fractional filling factors

F. Fischer*, M. Grayson, E. Schuberth, D. Schuh, M. Bichler, G. Abstreiter

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

Transport experiments in high mobility (1 1 0) GaAs heterostructures have been performed at very low temperatures (8 mK). At higher Landau-levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (0 0 1) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-level. An unprecedented feature of this new anisotropy is a dependence on the polarity of the magnetic field.

Original languageEnglish (US)
Pages (from-to)108-110
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
StatePublished - Apr 2004
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: Jul 14 2003Jul 18 2003

Keywords

  • High-mobility 2DEG
  • Low-temperature transport
  • Quantum Hall anisotropy (1 1 0) GaAs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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