New anisotropic behavior of quantum Hall resistance in (1 1 0) GaAs heterostructures at mK temperatures and fractional filling factors

F. Fischer; M. Grayson; E. Schuberth; D. Schuh; M. Bichler; G. Abstreiter

doi:10.1016/j.physe.2003.11.227

New anisotropic behavior of quantum Hall resistance in (1 1 0) GaAs heterostructures at mK temperatures and fractional filling factors

F. Fischer^*, M. Grayson, E. Schuberth, D. Schuh, M. Bichler, G. Abstreiter

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

Transport experiments in high mobility (1 1 0) GaAs heterostructures have been performed at very low temperatures (8 mK). At higher Landau-levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (0 0 1) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-level. An unprecedented feature of this new anisotropy is a dependence on the polarity of the magnetic field.

Original language	English (US)
Pages (from-to)	108-110
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	22
Issue number	1-3
DOIs	https://doi.org/10.1016/j.physe.2003.11.227
State	Published - Apr 2004
Event	15th International Conference on ELectronic Propreties - Nara, Japan Duration: Jul 14 2003 → Jul 18 2003

Funding

This work was supported financially by Deutsche Forschungsgemeinschaft via Schwerpunktprogramm Quanten-Hall-Systeme.

Keywords

High-mobility 2DEG
Low-temperature transport
Quantum Hall anisotropy (1 1 0) GaAs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2003.11.227

Cite this

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title = "New anisotropic behavior of quantum Hall resistance in (1 1 0) GaAs heterostructures at mK temperatures and fractional filling factors",

abstract = "Transport experiments in high mobility (1 1 0) GaAs heterostructures have been performed at very low temperatures (8 mK). At higher Landau-levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (0 0 1) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-level. An unprecedented feature of this new anisotropy is a dependence on the polarity of the magnetic field.",

keywords = "High-mobility 2DEG, Low-temperature transport, Quantum Hall anisotropy (1 1 0) GaAs",

author = "F. Fischer and M. Grayson and E. Schuberth and D. Schuh and M. Bichler and G. Abstreiter",

note = "Funding Information: This work was supported financially by Deutsche Forschungsgemeinschaft via Schwerpunktprogramm Quanten-Hall-Systeme. ; 15th International Conference on ELectronic Propreties ; Conference date: 14-07-2003 Through 18-07-2003",

year = "2004",

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doi = "10.1016/j.physe.2003.11.227",

language = "English (US)",

volume = "22",

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journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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T1 - New anisotropic behavior of quantum Hall resistance in (1 1 0) GaAs heterostructures at mK temperatures and fractional filling factors

AU - Fischer, F.

AU - Grayson, M.

AU - Schuberth, E.

AU - Schuh, D.

AU - Bichler, M.

AU - Abstreiter, G.

N1 - Funding Information: This work was supported financially by Deutsche Forschungsgemeinschaft via Schwerpunktprogramm Quanten-Hall-Systeme.

PY - 2004/4

Y1 - 2004/4

N2 - Transport experiments in high mobility (1 1 0) GaAs heterostructures have been performed at very low temperatures (8 mK). At higher Landau-levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (0 0 1) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-level. An unprecedented feature of this new anisotropy is a dependence on the polarity of the magnetic field.

AB - Transport experiments in high mobility (1 1 0) GaAs heterostructures have been performed at very low temperatures (8 mK). At higher Landau-levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (0 0 1) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-level. An unprecedented feature of this new anisotropy is a dependence on the polarity of the magnetic field.

KW - High-mobility 2DEG

KW - Low-temperature transport

KW - Quantum Hall anisotropy (1 1 0) GaAs

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DO - 10.1016/j.physe.2003.11.227

M3 - Conference article

AN - SCOPUS:1842684836

SN - 1386-9477

VL - 22

SP - 108

EP - 110

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

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T2 - 15th International Conference on ELectronic Propreties

Y2 - 14 July 2003 through 18 July 2003

ER -

New anisotropic behavior of quantum Hall resistance in (1 1 0) GaAs heterostructures at mK temperatures and fractional filling factors

Abstract

Funding

Keywords

ASJC Scopus subject areas

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