New approach to depositing yttria-stabilized zirconia buffer layers for coated conductors

S. Sambasivan; I. Kim; S. Barnett; M. A. Zurbuchen; J. Ji; B. W. Kang; A. Goyal; P. N. Barnes; C. E. Oberly

doi:10.1557/JMR.2003.0126

New approach to depositing yttria-stabilized zirconia buffer layers for coated conductors

S. Sambasivan^*, I. Kim, S. Barnett, M. A. Zurbuchen, J. Ji, B. W. Kang, A. Goyal, P. N. Barnes, C. E. Oberly

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A new approach for the production of yttria-stabilized zirconia (YSZ) oxide buffer layers directly on metal rolling-assisted biaxially textured substrates (RABiTS) is described in this paper. This represents a significant advance over existing techniques and avoids the need for complicated steps to avoid substrate oxidation during direct deposition of oxides. Current densities of about 1 MA/cm² have been achieved for YBa₂Cu₃O_7-δ layers on the YSZ buffer, with an intermediate CeO₂ layer. The process consists of reactive sputtering of a Y_xZr_1-x film directly on the RABiTS, which adopts its biaxial texture. This nitride film is then converted to YSZ via a thermal oxidation step. The YSZ films retain the texture of the nitride film (and of the RABiTS) through local syntaxy. In many cases, YSZ films exhibit improved biaxial texture over that of the RABiTS substrate. Nitrides can be sputter deposited at much higher rates relative to oxides, making the approach industrially scalable and economical.

Original language	English (US)
Pages (from-to)	919-928
Number of pages	10
Journal	Journal of Materials Research
Volume	18
Issue number	4
DOIs	https://doi.org/10.1557/JMR.2003.0126
State	Published - Apr 2003

Funding

Applied Thin Films, Inc. acknowledges the United States Missile Defense Agency (formerly the Ballistic Missile Defense Organization) for support through Small Business Innovation Research (SBIR) Contract No. F33615-00-C-2056, and Professor Vinayak P. Dravid of Northwestern University for the elemental mapping of nitrogen using TEM. Research at the Oak Ridge National Laboratory, managed by UT-Battelle, LLC for the United States Department of Energy was performed under Contract No. DE-AC05-00OR22725.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/JMR.2003.0126

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@article{74c2c351a75c457a88f204c4f821922e,

title = "New approach to depositing yttria-stabilized zirconia buffer layers for coated conductors",

abstract = "A new approach for the production of yttria-stabilized zirconia (YSZ) oxide buffer layers directly on metal rolling-assisted biaxially textured substrates (RABiTS) is described in this paper. This represents a significant advance over existing techniques and avoids the need for complicated steps to avoid substrate oxidation during direct deposition of oxides. Current densities of about 1 MA/cm2 have been achieved for YBa2Cu3O7-δ layers on the YSZ buffer, with an intermediate CeO2 layer. The process consists of reactive sputtering of a YxZr1-x film directly on the RABiTS, which adopts its biaxial texture. This nitride film is then converted to YSZ via a thermal oxidation step. The YSZ films retain the texture of the nitride film (and of the RABiTS) through local syntaxy. In many cases, YSZ films exhibit improved biaxial texture over that of the RABiTS substrate. Nitrides can be sputter deposited at much higher rates relative to oxides, making the approach industrially scalable and economical.",

author = "S. Sambasivan and I. Kim and S. Barnett and Zurbuchen, \{M. A.\} and J. Ji and Kang, \{B. W.\} and A. Goyal and Barnes, \{P. N.\} and Oberly, \{C. E.\}",

note = "Funding Information: Applied Thin Films, Inc. acknowledges the United States Missile Defense Agency (formerly the Ballistic Missile Defense Organization) for support through Small Business Innovation Research (SBIR) Contract No. F33615-00-C-2056, and Professor Vinayak P. Dravid of Northwestern University for the elemental mapping of nitrogen using TEM. Research at the Oak Ridge National Laboratory, managed by UT-Battelle, LLC for the United States Department of Energy was performed under Contract No. DE-AC05-00OR22725.",

year = "2003",

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doi = "10.1557/JMR.2003.0126",

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AU - Sambasivan, S.

AU - Kim, I.

AU - Barnett, S.

AU - Zurbuchen, M. A.

AU - Ji, J.

AU - Kang, B. W.

AU - Goyal, A.

AU - Barnes, P. N.

AU - Oberly, C. E.

N1 - Funding Information: Applied Thin Films, Inc. acknowledges the United States Missile Defense Agency (formerly the Ballistic Missile Defense Organization) for support through Small Business Innovation Research (SBIR) Contract No. F33615-00-C-2056, and Professor Vinayak P. Dravid of Northwestern University for the elemental mapping of nitrogen using TEM. Research at the Oak Ridge National Laboratory, managed by UT-Battelle, LLC for the United States Department of Energy was performed under Contract No. DE-AC05-00OR22725.

PY - 2003/4

Y1 - 2003/4

N2 - A new approach for the production of yttria-stabilized zirconia (YSZ) oxide buffer layers directly on metal rolling-assisted biaxially textured substrates (RABiTS) is described in this paper. This represents a significant advance over existing techniques and avoids the need for complicated steps to avoid substrate oxidation during direct deposition of oxides. Current densities of about 1 MA/cm2 have been achieved for YBa2Cu3O7-δ layers on the YSZ buffer, with an intermediate CeO2 layer. The process consists of reactive sputtering of a YxZr1-x film directly on the RABiTS, which adopts its biaxial texture. This nitride film is then converted to YSZ via a thermal oxidation step. The YSZ films retain the texture of the nitride film (and of the RABiTS) through local syntaxy. In many cases, YSZ films exhibit improved biaxial texture over that of the RABiTS substrate. Nitrides can be sputter deposited at much higher rates relative to oxides, making the approach industrially scalable and economical.

AB - A new approach for the production of yttria-stabilized zirconia (YSZ) oxide buffer layers directly on metal rolling-assisted biaxially textured substrates (RABiTS) is described in this paper. This represents a significant advance over existing techniques and avoids the need for complicated steps to avoid substrate oxidation during direct deposition of oxides. Current densities of about 1 MA/cm2 have been achieved for YBa2Cu3O7-δ layers on the YSZ buffer, with an intermediate CeO2 layer. The process consists of reactive sputtering of a YxZr1-x film directly on the RABiTS, which adopts its biaxial texture. This nitride film is then converted to YSZ via a thermal oxidation step. The YSZ films retain the texture of the nitride film (and of the RABiTS) through local syntaxy. In many cases, YSZ films exhibit improved biaxial texture over that of the RABiTS substrate. Nitrides can be sputter deposited at much higher rates relative to oxides, making the approach industrially scalable and economical.

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New approach to depositing yttria-stabilized zirconia buffer layers for coated conductors

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