New frontiers in inp based quantum devices

Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent research activities taking place at Center for Quantum Devices (CQD) based on InP material system, especially the exploration and demonstration of the state-of-art high performance Quantum Cascade Lasers (QCL), greatly facilitate the understanding of the underlining physical principles governing the device operation. Thanks to the endless effort putting into the semiconductor epitaxy technologies, including the Molecular Beam Epitaxy (MBE) and Low pressure Metal Organic Chemical Vapor Deposition (LP-MOCVD), the world has seen a close approaching to the ultimate ", band gap engineering", . Highly sophisticated manmade heterostructure, which incorporates hundreds of alternating layers of GalnAs/AllnAs with each layer thickness and composition specifically designed, can be createdwithin a single growth. The material quality is evidenced by the atomically abrupt interfaces. The versatility of the ", band gap engineering", is greatly enhanced by the strain-balanced technique, which allows for growing structures with continuously tunable conduction band offset with little defects. As a result, the room temperature continuous wave (cw) wall plug efficiency (WPE) and the maximum achievable output optical power from a single device have been constantly improving. Novel waveguide incorporating the photonic crystal distributed feedback (PCDFB) mechanism is also investigated with satisfactory preliminary results.

Original languageEnglish (US)
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
StatePublished - Dec 1 2008
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: May 25 2008May 29 2008

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
CountryFrance
CityVersailles
Period5/25/085/29/08

Keywords

  • Epitaxy
  • High performance
  • Quantum cascade lasers
  • Quantum devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Razeghi, M. (2008). New frontiers in inp based quantum devices. In 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 [4703051] https://doi.org/10.1109/ICIPRM.2008.4703051