New generation of flexible GHz graphene transistor

Henri Happy, Cedric Sire, Florence Ardiaca, Sylvie Lepilliet, Jung Woo T. Seo, Mark C. Hersam, Gilles Dambrine, Vincent Derycke

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Flexible organic electronic holds today promise of a new class of devices which offer possibility of large scale manufacturing, low cost, lightweight and mechanical flexibility. But combining high speed, high functionality and compatibility with plastic substrates is particularly challenging. Today, one estimates that carbon allotropes such as carbon nanotube and graphene combine all the necessary properties to meet this challenging goal. In particular, graphene material exhibits the very high carrier mobility allows targeting high frequency circuits on flexible substrate. Our graphene transistors fabricated using solution-based graphene show extrinsic current gain cutoff frequencies of 2.2 GHz and power gain cutoff frequencies of 550 MHz.

Original languageEnglish (US)
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Number of pages2
StatePublished - 2012
Externally publishedYes
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: Dec 4 2012Dec 7 2012

Publication series

NameProceedings of the International Display Workshops
ISSN (Print)1883-2490


Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012


  • Flexible electronics
  • Graphene
  • High-frequency
  • Single-layer
  • Solution-based
  • Transistor

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging


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