New generation of isolated electron-injection imagers

Vala Fathipour*, Sung J. Jang, Hooman Mohseni

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

This paper describes a novel electron-injection based short-wave infrared imager. The first generation of electron-injection imager achieved two orders of magnitude better signal to noise ratio compared with a commercial high-end SWIR camera. In the second generation, detectors are isolated and achieve extremely low dark current, record low noise levels and fast rise times while maintaining the very large internal amplification. Furthermore, electron-injection imager shows superior noise performance compared with imagers made with the state-of-the-art InGaAs PIN and MCT eAPDs.

Original languageEnglish (US)
Title of host publication2014 13th Workshop on Information Optics, WIO 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479959730
DOIs
StatePublished - Oct 21 2014
Event2014 13th Workshop on Information Optics, WIO 2014 - Neuchatel, Switzerland
Duration: Jul 7 2014Jul 11 2014

Publication series

Name2014 13th Workshop on Information Optics, WIO 2014

Other

Other2014 13th Workshop on Information Optics, WIO 2014
Country/TerritorySwitzerland
CityNeuchatel
Period7/7/147/11/14

Keywords

  • Infrared detectors
  • Infrared image sensors
  • Infrared imaging

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Information Systems
  • Atomic and Molecular Physics, and Optics

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