TY - GEN
T1 - New insights into sequential infiltration synthesis
AU - Elam, Jeffrey W.
AU - Biswas, Mahua
AU - Darling, Seth B.
AU - Yanguas-Gil, Angel
AU - Emery, Jonathan Daniel
AU - Martinson, Alex B.F.
AU - Nealey, Paul F.
AU - Segal-Peretz, Tamar
AU - Peng, Qing
AU - Winterstein, Jonathan
AU - Liddle, J. Alexander
AU - Tseng, Yu Chih
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - Sequential infiltration synthesis (SIS) is a process derived from ALD in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors. SIS can be used in lithography to harden polymer resists rendering them more robust towards subsequent etching, and this permits deeper and higher-resolution patterning of substrates such as silicon. Herein we describe recent investigations of a model system: Al2O3 SIS using trimethyl aluminum (TMA) and H2O within the diblock copolymer, poly(styrene-block-methyl methacrylate) (PS-b- PMMA). Combining in-situ Fourier transform infrared absorption spectroscopy, quartz-crystal microbalance, and synchrotron grazing incidence small angle X-ray scattering with high resolution scanning transmission electron microscope tomography, we elucidate important details of the SIS process: 1) TMA adsorption in PMMA occurs through a weakly-bound intermediate; 2) the SIS kinetics are diffusion-limited, with desorption 10x slower than adsorption; 3) dynamic structural changes occur during the individual precursor exposures. These findings have important implications for applications such as SIS lithography.
AB - Sequential infiltration synthesis (SIS) is a process derived from ALD in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors. SIS can be used in lithography to harden polymer resists rendering them more robust towards subsequent etching, and this permits deeper and higher-resolution patterning of substrates such as silicon. Herein we describe recent investigations of a model system: Al2O3 SIS using trimethyl aluminum (TMA) and H2O within the diblock copolymer, poly(styrene-block-methyl methacrylate) (PS-b- PMMA). Combining in-situ Fourier transform infrared absorption spectroscopy, quartz-crystal microbalance, and synchrotron grazing incidence small angle X-ray scattering with high resolution scanning transmission electron microscope tomography, we elucidate important details of the SIS process: 1) TMA adsorption in PMMA occurs through a weakly-bound intermediate; 2) the SIS kinetics are diffusion-limited, with desorption 10x slower than adsorption; 3) dynamic structural changes occur during the individual precursor exposures. These findings have important implications for applications such as SIS lithography.
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U2 - 10.1149/06907.0147ecst
DO - 10.1149/06907.0147ecst
M3 - Conference contribution
C2 - 28503252
AN - SCOPUS:84945907332
T3 - ECS Transactions
SP - 147
EP - 157
BT - Atomic Layer Deposition Applications 11
A2 - Roozeboom, F.
A2 - De Gendt, S.
A2 - Delabie, A.
A2 - Elam, J. W.
A2 - van der Straten, O.
A2 - Huffman, C.
PB - Electrochemical Society Inc.
T2 - Symposium on Atomic Layer Deposition Applications 11 - 228th ECS Meeting
Y2 - 11 October 2015 through 15 October 2015
ER -