New insights into sequential infiltration synthesis

Jeffrey W. Elam, Mahua Biswas, Seth B. Darling, Angel Yanguas-Gil, Jonathan Daniel Emery, Alex B.F. Martinson, Paul F. Nealey, Tamar Segal-Peretz, Qing Peng, Jonathan Winterstein, J. Alexander Liddle, Yu Chih Tseng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Scopus citations


Sequential infiltration synthesis (SIS) is a process derived from ALD in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors. SIS can be used in lithography to harden polymer resists rendering them more robust towards subsequent etching, and this permits deeper and higher-resolution patterning of substrates such as silicon. Herein we describe recent investigations of a model system: Al2O3 SIS using trimethyl aluminum (TMA) and H2O within the diblock copolymer, poly(styrene-block-methyl methacrylate) (PS-b- PMMA). Combining in-situ Fourier transform infrared absorption spectroscopy, quartz-crystal microbalance, and synchrotron grazing incidence small angle X-ray scattering with high resolution scanning transmission electron microscope tomography, we elucidate important details of the SIS process: 1) TMA adsorption in PMMA occurs through a weakly-bound intermediate; 2) the SIS kinetics are diffusion-limited, with desorption 10x slower than adsorption; 3) dynamic structural changes occur during the individual precursor exposures. These findings have important implications for applications such as SIS lithography.

Original languageEnglish (US)
Title of host publicationAtomic Layer Deposition Applications 11
EditorsA. Delabie, S. De Gendt, J. W. Elam, F. Roozeboom, O. van der Straten, C. Huffman
PublisherElectrochemical Society Inc.
Number of pages11
ISBN (Electronic)9781607685395
StatePublished - 2015
EventSymposium on Atomic Layer Deposition Applications 11 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


OtherSymposium on Atomic Layer Deposition Applications 11 - 228th ECS Meeting
CountryUnited States

ASJC Scopus subject areas

  • Engineering(all)

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