New method for rapid determination of crystal orientation via Kikuchi patterns

G. P.E.M. Van Bakel*, David N Seidman

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Kikuchi electron diffraction patterns are used extensively to determine crystal orientations via transmission electron microscopy (TEM) or in the electron backscattering pattern (EBSP) mode of scanning electron microscopy (SEM). A new method is presented that is capable of finding crystal orientations, the camera length, and the projection center from only one pattern per grain using a least-squares technique. This method eliminates the need to perform an alignment with a reference crystal in the backscattering mode. Application to a ∑ = 13a silicon bicrystal is presented for TEM patterns and EBSP's. A complete analysis of the propagation of random measurement errors into the disorientation axis/angle pair is carried out. The root mean square deviation from the nominal disorientation angle is found to be 0.3° in the case of TEM and 0.5° in the case of EBSP. The root mean square inclination between the nominal and measured disorientation axis is found to be 1° in the case of TEM and 0.5° in the case of EBSP.

Original languageEnglish (US)
Pages (from-to)3026-3036
Number of pages11
JournalJournal of Materials Research
Volume10
Issue number12
DOIs
StatePublished - Jan 1 1995

Fingerprint

Backscattering
Crystal orientation
disorientation
Transmission electron microscopy
backscattering
transmission electron microscopy
crystals
Electrons
Bicrystals
Random errors
Silicon
Measurement errors
Electron diffraction
electrons
bicrystals
Diffraction patterns
Cameras
inclination
diffraction patterns
electron diffraction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{60e7e43d1eae416691774d9b18411a02,
title = "New method for rapid determination of crystal orientation via Kikuchi patterns",
abstract = "Kikuchi electron diffraction patterns are used extensively to determine crystal orientations via transmission electron microscopy (TEM) or in the electron backscattering pattern (EBSP) mode of scanning electron microscopy (SEM). A new method is presented that is capable of finding crystal orientations, the camera length, and the projection center from only one pattern per grain using a least-squares technique. This method eliminates the need to perform an alignment with a reference crystal in the backscattering mode. Application to a ∑ = 13a silicon bicrystal is presented for TEM patterns and EBSP's. A complete analysis of the propagation of random measurement errors into the disorientation axis/angle pair is carried out. The root mean square deviation from the nominal disorientation angle is found to be 0.3° in the case of TEM and 0.5° in the case of EBSP. The root mean square inclination between the nominal and measured disorientation axis is found to be 1° in the case of TEM and 0.5° in the case of EBSP.",
author = "{Van Bakel}, {G. P.E.M.} and Seidman, {David N}",
year = "1995",
month = "1",
day = "1",
doi = "10.1557/JMR.1995.3026",
language = "English (US)",
volume = "10",
pages = "3026--3036",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "12",

}

New method for rapid determination of crystal orientation via Kikuchi patterns. / Van Bakel, G. P.E.M.; Seidman, David N.

In: Journal of Materials Research, Vol. 10, No. 12, 01.01.1995, p. 3026-3036.

Research output: Contribution to journalArticle

TY - JOUR

T1 - New method for rapid determination of crystal orientation via Kikuchi patterns

AU - Van Bakel, G. P.E.M.

AU - Seidman, David N

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Kikuchi electron diffraction patterns are used extensively to determine crystal orientations via transmission electron microscopy (TEM) or in the electron backscattering pattern (EBSP) mode of scanning electron microscopy (SEM). A new method is presented that is capable of finding crystal orientations, the camera length, and the projection center from only one pattern per grain using a least-squares technique. This method eliminates the need to perform an alignment with a reference crystal in the backscattering mode. Application to a ∑ = 13a silicon bicrystal is presented for TEM patterns and EBSP's. A complete analysis of the propagation of random measurement errors into the disorientation axis/angle pair is carried out. The root mean square deviation from the nominal disorientation angle is found to be 0.3° in the case of TEM and 0.5° in the case of EBSP. The root mean square inclination between the nominal and measured disorientation axis is found to be 1° in the case of TEM and 0.5° in the case of EBSP.

AB - Kikuchi electron diffraction patterns are used extensively to determine crystal orientations via transmission electron microscopy (TEM) or in the electron backscattering pattern (EBSP) mode of scanning electron microscopy (SEM). A new method is presented that is capable of finding crystal orientations, the camera length, and the projection center from only one pattern per grain using a least-squares technique. This method eliminates the need to perform an alignment with a reference crystal in the backscattering mode. Application to a ∑ = 13a silicon bicrystal is presented for TEM patterns and EBSP's. A complete analysis of the propagation of random measurement errors into the disorientation axis/angle pair is carried out. The root mean square deviation from the nominal disorientation angle is found to be 0.3° in the case of TEM and 0.5° in the case of EBSP. The root mean square inclination between the nominal and measured disorientation axis is found to be 1° in the case of TEM and 0.5° in the case of EBSP.

UR - http://www.scopus.com/inward/record.url?scp=0029520881&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029520881&partnerID=8YFLogxK

U2 - 10.1557/JMR.1995.3026

DO - 10.1557/JMR.1995.3026

M3 - Article

VL - 10

SP - 3026

EP - 3036

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 12

ER -