New semiconductors based on 2,2′-ethyne-1,2-diylbis[3-(alk-1-yn-1-yl) thiophene] for organic opto-electronics

INIS

• semiconductor materials 100%
• microstructure 100%
• thiophene 100%
• ethyne 100%
• yttrium nitrides 100%
• range 66%
• devices 66%
• synthesis 66%
• molecules 33%
• films 33%
• x-ray diffraction 33%
• probes 33%
• efficiency 33%
• units 33%
• morphology 33%
• variations 33%
• electronic structure 33%
• electrons 33%
• charges 33%
• transport 33%
• power 33%
• conversion 33%
• spin 33%
• calculation methods 33%
• yields 33%
• density functional method 33%
• heterojunctions 33%
• grain boundaries 33%
• holes 33%
• annealing 33%
• photovoltaic cells 33%
• field effect transistors 33%
• electron acceptor 33%
• afm 33%
• hole mobility 33%

Material Science

• Semiconductor Material 100%
• Material 100%
• Electronics 100%
• Devices 100%
• Microstructure 100%
• Cast 50%
• Photovoltaics 50%
• Annealing 50%
• Hole Mobility 50%
• Heterojunction 50%
• Organic Field Effect Transistors 50%
• Organic Solar Cells 50%
• Microstructure Characterization 50%
• Long-Range Order 50%
• Probe 50%
• Morphology 50%
• Materials Property 50%
• X-Ray Diffraction 50%
• Electronic Structure 50%
• Density 50%
• Solar Cell 50%
• Grain Boundary 50%

Engineering

• Microstructure 100%
• Semiconductor 100%
• Thiophene 100%
• Properties 66%
• Heterojunctions 33%
• Power Conversion Efficiency 33%
• Building Block 33%
• Electron Acceptor 33%
• Energy Gap 33%
• Substituent 33%
• Thermal Annealing 33%
• Crystallinity 33%
• Grain Boundary 33%
• Ray Diffraction 33%
• Spin Cast 33%
• Models 33%
• Density 33%
• Long Range 33%
• Range Order 33%