Nickel oxide growth on Si (111), c-Al2O3 and FTO/glass by pulsed laser deposition

V. E. Sandana, D. J. Rogers, F. Hosseini Teherani, P. Bove, R. McClintock, M. Razeghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

NiO was grown on Si (111), c-Al2O3 and FTO/glass substrates by pulsed laser deposition (PLD). X-Ray Diffraction (XRD) and scanning electron microscope (SEM) studies revealed that layers grown on c-Al2O3 were fcc NiO with a dense morphology of cubic grains that were strongly (111) oriented along the growth direction. The relatively low ω rocking curve linewidth, of 0.12°suggests that there may have been epitaxial growth on the c-Al2O3 substrate. XRD and SEM indicated that films grown on Si (111) were also fcc NiO, with cubic grains, but that the grain orientation was random. This is consistent with the presence of an amorphous SiO2 layer at the surface of the Si substrate, which precluded epitaxial growth. NiO grown at lower temperature (200°C) on temperature-sensitive FTO/glass substrates showed no evidence of crystallinity in XRD and SEM studies. After flash annealing in air, however, peaks characteristic of randomly oriented fcc NiO appeared in the XRD scans and the surface morphology became more granular in appearance. Such layers appear promising for the development of future dye-sensitised solar cell devices based on NiO grown by PLD.

Original languageEnglish (US)
Title of host publicationOxide-Based Materials and Devices V
PublisherSPIE
ISBN (Print)9780819499004
DOIs
StatePublished - Jan 1 2014
Event5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United States
Duration: Feb 2 2014Feb 5 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8987
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

Other5th Annual Oxide Based Materials and Devices Conference
CountryUnited States
CitySan Francisco, CA
Period2/2/142/5/14

Keywords

  • DSSC
  • FTO/Glass
  • NiO
  • P-type semiconductor
  • Pulsed Laser Deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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