Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

Xinqiang Wang; Shuren Yang; Jinzhong Wang; Mingtao Li; Xiuying Jiang; Guotong Du; Xiang Liu; R. P.H. Chang

doi:10.1016/S0022-0248(01)01367-7

Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

Xinqiang Wang^*, Shuren Yang, Jinzhong Wang, Mingtao Li, Xiuying Jiang, Guotong Du, Xiang Liu, R. P.H. Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

123 Scopus citations

Abstract

Nitrogen doped and non-doped ZnO films are grown by the plasma-assisted metal-organic chemical vapor deposition (MOCVD) on sapphire. X-ray diffraction spectra show that they are both strongly c-oriented while the N-doped sample is of better crystal quality. A strong emission coming from A-exciton is observed at 10 and 77K photoluminescence (PL) spectra in both samples while deep level transition is hardly observed. More emission peaks are found in the PL spectrum of the N-doped sample relative to that of a non-doped one. Raman scattering is also performed in back scattering configuration. E₂ mode is observed in both samples while A_1(LO) mode can only be found in the N-doped sample, which indicates that high quality of the N-doped ZnO film. A high resistive ZnO film is obtained by nitrogen doping.

Original language	English (US)
Pages (from-to)	123-129
Number of pages	7
Journal	Journal of Crystal Growth
Volume	226
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(01)01367-7
State	Published - Jun 2001

Keywords

A1. Doping
A3. Metalorganic chemical vapor deposition
B2. Semiconducting materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition",

abstract = "Nitrogen doped and non-doped ZnO films are grown by the plasma-assisted metal-organic chemical vapor deposition (MOCVD) on sapphire. X-ray diffraction spectra show that they are both strongly c-oriented while the N-doped sample is of better crystal quality. A strong emission coming from A-exciton is observed at 10 and 77K photoluminescence (PL) spectra in both samples while deep level transition is hardly observed. More emission peaks are found in the PL spectrum of the N-doped sample relative to that of a non-doped one. Raman scattering is also performed in back scattering configuration. E2 mode is observed in both samples while A1(LO) mode can only be found in the N-doped sample, which indicates that high quality of the N-doped ZnO film. A high resistive ZnO film is obtained by nitrogen doping.",

keywords = "A1. Doping, A3. Metalorganic chemical vapor deposition, B2. Semiconducting materials",

author = "Xinqiang Wang and Shuren Yang and Jinzhong Wang and Mingtao Li and Xiuying Jiang and Guotong Du and Xiang Liu and Chang, {R. P.H.}",

note = "Funding Information: This work was supported by NSFC-RGC (No. 59910161983) and Jilin Province Science Fund (No. 19990518-1). ",

year = "2001",

month = jun,

doi = "10.1016/S0022-0248(01)01367-7",

language = "English (US)",

volume = "226",

pages = "123--129",

journal = "Journal of Crystal Growth",

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T1 - Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

AU - Wang, Xinqiang

AU - Yang, Shuren

AU - Wang, Jinzhong

AU - Li, Mingtao

AU - Jiang, Xiuying

AU - Du, Guotong

AU - Liu, Xiang

AU - Chang, R. P.H.

N1 - Funding Information: This work was supported by NSFC-RGC (No. 59910161983) and Jilin Province Science Fund (No. 19990518-1).

PY - 2001/6

Y1 - 2001/6

N2 - Nitrogen doped and non-doped ZnO films are grown by the plasma-assisted metal-organic chemical vapor deposition (MOCVD) on sapphire. X-ray diffraction spectra show that they are both strongly c-oriented while the N-doped sample is of better crystal quality. A strong emission coming from A-exciton is observed at 10 and 77K photoluminescence (PL) spectra in both samples while deep level transition is hardly observed. More emission peaks are found in the PL spectrum of the N-doped sample relative to that of a non-doped one. Raman scattering is also performed in back scattering configuration. E2 mode is observed in both samples while A1(LO) mode can only be found in the N-doped sample, which indicates that high quality of the N-doped ZnO film. A high resistive ZnO film is obtained by nitrogen doping.

AB - Nitrogen doped and non-doped ZnO films are grown by the plasma-assisted metal-organic chemical vapor deposition (MOCVD) on sapphire. X-ray diffraction spectra show that they are both strongly c-oriented while the N-doped sample is of better crystal quality. A strong emission coming from A-exciton is observed at 10 and 77K photoluminescence (PL) spectra in both samples while deep level transition is hardly observed. More emission peaks are found in the PL spectrum of the N-doped sample relative to that of a non-doped one. Raman scattering is also performed in back scattering configuration. E2 mode is observed in both samples while A1(LO) mode can only be found in the N-doped sample, which indicates that high quality of the N-doped ZnO film. A high resistive ZnO film is obtained by nitrogen doping.

KW - A1. Doping

KW - A3. Metalorganic chemical vapor deposition

KW - B2. Semiconducting materials

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

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