Nitrogen related defect centers in zinc selenide

W. B. Leigh; B. W. Wessels

doi:10.1063/1.333423

Nitrogen related defect centers in zinc selenide

W. B. Leigh^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Acceptor levels associated with nitrogen in vapor-grown zinc selenide have been observed with optically excited transient capacitance spectroscopy. Three hole traps with energy levels of E_v +0.085, E_v +0.10, and E_v +0.16 eV, respectively, were detected in the deliberately nitrogen doped material. An electron trap at E_c -0.35 eV whose concentration increased upon nitrogen doping was also detected. Total concentrations of the shallow hole levels were as high as 1×10¹⁶ cm ^-3 indicating the potential of nitrogen as a p-type dopant for zinc selenide p-n junction fabrication.

Original language	English (US)
Pages (from-to)	1614-1616
Number of pages	3
Journal	Journal of Applied Physics
Volume	55
Issue number	6
DOIs	https://doi.org/10.1063/1.333423
State	Published - 1984

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Nitrogen related defect centers in zinc selenide",

abstract = "Acceptor levels associated with nitrogen in vapor-grown zinc selenide have been observed with optically excited transient capacitance spectroscopy. Three hole traps with energy levels of Ev +0.085, Ev +0.10, and Ev +0.16 eV, respectively, were detected in the deliberately nitrogen doped material. An electron trap at Ec -0.35 eV whose concentration increased upon nitrogen doping was also detected. Total concentrations of the shallow hole levels were as high as 1×1016 cm -3 indicating the potential of nitrogen as a p-type dopant for zinc selenide p-n junction fabrication.",

author = "Leigh, {W. B.} and Wessels, {B. W.}",

year = "1984",

doi = "10.1063/1.333423",

language = "English (US)",

volume = "55",

pages = "1614--1616",

journal = "Journal of Applied Physics",

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T1 - Nitrogen related defect centers in zinc selenide

AU - Leigh, W. B.

AU - Wessels, B. W.

PY - 1984

Y1 - 1984

N2 - Acceptor levels associated with nitrogen in vapor-grown zinc selenide have been observed with optically excited transient capacitance spectroscopy. Three hole traps with energy levels of Ev +0.085, Ev +0.10, and Ev +0.16 eV, respectively, were detected in the deliberately nitrogen doped material. An electron trap at Ec -0.35 eV whose concentration increased upon nitrogen doping was also detected. Total concentrations of the shallow hole levels were as high as 1×1016 cm -3 indicating the potential of nitrogen as a p-type dopant for zinc selenide p-n junction fabrication.

AB - Acceptor levels associated with nitrogen in vapor-grown zinc selenide have been observed with optically excited transient capacitance spectroscopy. Three hole traps with energy levels of Ev +0.085, Ev +0.10, and Ev +0.16 eV, respectively, were detected in the deliberately nitrogen doped material. An electron trap at Ec -0.35 eV whose concentration increased upon nitrogen doping was also detected. Total concentrations of the shallow hole levels were as high as 1×1016 cm -3 indicating the potential of nitrogen as a p-type dopant for zinc selenide p-n junction fabrication.

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DO - 10.1063/1.333423

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Nitrogen related defect centers in zinc selenide

Abstract

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