Nitrogen related defect centers in zinc selenide

W. B. Leigh*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Acceptor levels associated with nitrogen in vapor-grown zinc selenide have been observed with optically excited transient capacitance spectroscopy. Three hole traps with energy levels of Ev +0.085, Ev +0.10, and Ev +0.16 eV, respectively, were detected in the deliberately nitrogen doped material. An electron trap at Ec -0.35 eV whose concentration increased upon nitrogen doping was also detected. Total concentrations of the shallow hole levels were as high as 1×1016 cm -3 indicating the potential of nitrogen as a p-type dopant for zinc selenide p-n junction fabrication.

Original languageEnglish (US)
Pages (from-to)1614-1616
Number of pages3
JournalJournal of Applied Physics
Volume55
Issue number6
DOIs
StatePublished - 1984

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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