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Nitrogen related defect centers in zinc selenide
W. B. Leigh
*
, B. W. Wessels
*
Corresponding author for this work
MRC - Materials Research Center
Research output
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Article
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peer-review
12
Scopus citations
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Keyphrases
Zinc Selenide
100%
Defect Centers
100%
Nitrogen Defects
100%
P-n Junction
33%
Energy Levels
33%
Nitrogen Doping
33%
Electron Traps
33%
Total Concentration
33%
Cm(III)
33%
Hole Trapping
33%
Acceptor Level
33%
P-type Dopant
33%
Transient Capacitance
33%
Capacitance Spectroscopy
33%
Nitrogen-doped Materials
33%
Material Science
Doping (Additives)
100%
Capacitance
100%
Zinc
100%
Chemistry
Selenide
100%
Doping Material
33%
Doped Compound
33%
Hole Trap
33%
Deep Level Transient Spectroscopy
33%
Electron Trap
33%
Acceptor Level
33%